Abstract:A small indium flux was used as a surfactant during the growth of gallium nitride films by rf-plasma assisted molecular beam epitaxy. The effects of the indium surfactant on the optical and structural properties of undoped GaN were studied by photoluminescence spectroscopy, high-resolution X-ray diffraction, atomic force microscopy, Rutherford backscattering spectroscopy, and low-frequency noise. Photoluminescence spectra show that GaN thin films grown in the presence of In surfactant exhibit suppressed yellow luminescence compared to films grown under the same experimental conditions but without In surfactant. The X-ray rocking curves demonstrate a 20% decrease in the full width at half maximum value for the films grown with In surfactant. AFM studies show that the root mean squared roughness for films grown with and without In surfactant are 5.86 and 6.99 nm respectively, indicating significant improvement in surface morphology. RES and ion channeling shows the presence of stacking faults and dislocations in GaN grown with In surfactant and stacking faults in GaN grown without In. For the characterization of defect properties in the films we conducted detailed studies of l/f and Generation-Recombination (C-R) noise on our samples. About 65% reduction in the Hooge parameter was observed in the Film grown with In surfactant, indicative of a corresponding reduction in defect states within the material. For f > 500 Hz, G-R noise was the dominating fluctuation process. Detailed characterization of the G-R noise over a wide range of temperatures enabled the determination of the energy levels of the traps responsible for the G-R noise. Three different trap levels were observed using noise measurement technique. For films grown without In surfactant, traps with activation energies 806 meV, 241 meV and 100 meV were observed, whereas for samples grown with In surfactant traps were observed at 666 meV, 208 meV and 90 meV. Such systematic reduction in the energy levels of the traps may arise from the relaxation of strains in the material when grown under the application of In surfactant.

Ga-free AlInN films growth by close-coupled showerhead metalorganic chemical vapor deposition

Improved Surface Morphology and Reduced V-Pits Density of Lattice-Matched Alinn Films Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition

Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)

Growth of High Quality N-Al0.5ga0.5n Thick Films by Mocvd

Growth mechanism of vertical compositional inhomogeneities in AlInN films

Effects and Mechanisms of in Surfactant on High Al-content AlGaN Grown by Plasma-Assisted Molecular Beam Epitaxy.

An inductively coupled plasma metal organic chemical vapor deposition based on showerhead structure for low temperature growth

High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control

MOCVD growth and annealing characteristics of Mg-doped AlGaN films

Spatial Distribution Study of a Nitrogen Plasma in an Ion-Filtered Inductively Coupled Plasma Used to Grow GaN Films

AlN Thin Films Grown on Different Substrates by Metal Nitride Vapor Phase Epitaxy

Numerical simulation study on growth rate and gas reaction path of InN-MOCVD with Close-Coupled showerhead reactor

Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture

Characteristics of High Al Content AlxGa1−xN Grown by Metalorganic Chemical Vapor Deposition

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal-Organic Chemical Vapor Deposition

Effect of Indium Surfactant on the Optical and Structural Properties of MBE-grown GaN

Epitaxial Growth and Interfaces of High-Quality InN Films Grown on Nitrided Sapphire Substrates

Synthesis of high Al content Al x Ga 1− x N ternary films by pulsed laser co-ablation of GaAs and Al targets assisted by nitrogen plasma

High Quality AlN Film Grown on a Nano-Concave-circle Patterned Si Substrate with an AlN Seed Layer

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer