Abstract:The authors present an in situ study of the effect of nitrogen plasma pulse time on the temporal evolution of the surface morphology of InN growth on a-plane sapphire at 250 °C by plasma assisted atomic layer epitaxy (ALEp). The growth surface evolution was monitored in real-time using grazing incidence small angle x-ray scattering (GISAXS) measurements at an x-ray incidence angle of 0.8°. Nitrogen plasma pulse time (tp) was varied between 15 and 30 s in 5-s steps, and for all tp, the near specular scattering broadens and correlated peaks develop and evolve along the Yoneda Wing (YW). For tp ≥ 20 s, a YW with one correlated length scale evolves. At the end of the growth, the longest correlated length scale is 16.54 nm for tp = 25 s. Porod analysis of GISAXS intensity at high qy for tp = 25 s shows the formation of mounded shapes at the early stage of nucleation that transitioned to cylinders after about 3 unit cells of InN growth. Additionally, at tp = 25 s, the growth rate is highest with root mean square surface roughness and carbon impurity levels at or below atomic force microscopy and x-ray photoelectron spectroscopy sensitivity limits, respectively. At tp < 25 s, the growth surface may be undersaturated and at tp > 30 s, it appears that trimethylindium precursor molecules start to decompose, resulting in higher carbon content in the film. Thus, the nature of GISAXS correlated length scale directly correlates with the material quality. Additional ex situ characterizations reveal an electron mobility of 6–31 cm2/V s for a 3–5 nm thick InN film on a-plane sapphire, which is similar to the reported value of 30 cm2/V s for a 1300 nm thick InN film grown by molecular beam epitaxy directly on sapphire. Thus, the combination of in situ synchrotron x-ray analysis and ex situ characterization is a powerful approach to develop understanding of the growth mechanisms of ALEp of III-N materials in order to improve the quality by reducing impurities and broaden material applications.

Spatial Distribution Study of a Nitrogen Plasma in an Ion-Filtered Inductively Coupled Plasma Used to Grow GaN Films

III-nitride Epitaxy by Ion Filtered Inductively Coupled Plasma MOCVD

An inductively coupled plasma metal organic chemical vapor deposition based on showerhead structure for low temperature growth

Structural Modulation of GaN Nanowires Grown in High-Density Plasma Environment

Numerical simulation study on growth rate and gas reaction path of InN-MOCVD with Close-Coupled showerhead reactor

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering

Model for Low-Temperature Growth of Gallium Nitride

Ga-free AlInN films growth by close-coupled showerhead metalorganic chemical vapor deposition

Gallium Nitride Films Synthesized by Reactive Pulsed Laser Deposition from A Gaas Target

Rapid growth and characterization of InN nanocolumns on InGaN buffer layers at a low ratio of N/In

Influence of Nitridation on III-nitride Films Grown on Graphene/quartz Substrates by Plasma-Assisted Molecular Beam Epitaxy

Direct growth of highly oriented GaN thin films on silicon by remote plasma CVD

The mechanism of H 2 plasma in III-nitride low-temperature epitaxy

Influence of GaN Buffer Layer for InN Growth

Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture

The High Mobility Inn Film Grown by Mocvd with Gan Buffer Layer

Spectroscopic Characterization of the Plasma Generated During the Deposition of AlxGa1−xN Films by Pulsed Laser Co-Ablation of Al and GaAs Targets in Electron Cyclotron Resonance Nitrogen Plasma

Low-temperature synthesis of gallium nitride thin films using electron cyclotron resonance plasma assisted pulsed laser deposition from a GaAs target

Gallium nitride deposition via magnetron sputtering: Linking plasma-surface interactions and thin film crystalline features

Growth of GaN Films by Nitriding Ga2O3 Films Sputtered on the Ga-diffused Si(111)Substrate