Abstract:Surfaces of metal oxides are of crucial importance for a variety of technological applications such as heterogeneous catalysis, thin film growth, gas sensing, and corrosion prevention [1]. Due to the complexities of oxides in crystal structure and electronic structure, however, the surface science of oxides lags far behind that of metals or semiconductors. Conventional surface-science techniques, typically scanning tunneling microscopy (STM) and low energy electron diffraction (LEED), are usually limited to surfaces of single crystals with relatively simple structures. Metal oxides are usually good insulators, either band insulators or Mott insulators, making them not suitable for STM, LEED, and most of spectroscopic methods using low energy electrons as probes. On the other hand, the complex atomic structures of oxides results in too many structural parameters to be determined by spectroscopy or diffraction methods. Recent developments in high-resolution transmission electron microscopy (TEM) provide us opportunities to overcome the above difficulties. With the realization of aberration-correction, the point resolution of TEM has been improved into the milestone 1 Angstrom scale. In addition, the correction of the spherical aberration has almost eliminated the contrast delocalization in high-resolution images. Therefore, high resolution TEM becomes an even more powerful tool than before for materials research at a truly atomic-scale. Here, we will present our recent works on atomic and electronic structure of oxide surfaces [2-3]. We will show that the structure and dynamics of oxide surfaces can be directly imaged and measured at the sub-angstrom scale with an accuracy of picometers, comparable to that obtained by conventional surface science techniques on single crystals.

Scanning Force/Tunneling Microscopy as a Novel Technique for the Study of Nanometer-Scale Dielectric Breakdown of Silicon Oxide Layer

Measurement of Sub-Surface Microstructures Based on a Developed Ultrasonic Atomic Force Microscopy

Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe

Microwave Atomic Force Microscopy Imaging for Nanometer-Scale Electrical Property Characterization.

Quantitative Evaluation of Local Permittivity of Semiconductor Nanomaterials Using Microwave Atomic Force Microscopy

Microwave Atomic Force Microscopy: Quantitative Measurement and Characterization of Electrical Properties on the Nanometer Scale

On the Limits of Scalpel AFM for the 3D Electrical Characterization of Nanomaterials

Quantitative Measurement of Local Conductivity of SnO2 Nanobelt Field Effect Transistor Utilizing Microwave Atomic Force Microscopy

A Novel Atomic Force Microscope Operating in Liquid for in Situ Investigation of Electrochemical Preparation of Porous Alumina.

Influence of Material Surface on the Measurement of Local Electrical Conductivity Using Microwave Atomic Force Microscopy

3-D finite element calculation of electric field enhancement for nanostructures fabrication mechanism on silicon surface with AFM tip induced local anodic oxidation

Combining Scanning Tunneling Microscope (STM) Imaging and Local Manipulation to Probe the High Dose Oxidation Structure of the Si(111)-7×7 Surface

Detection of confined current paths on oxide surfaces by local-conductivity atomic force microscopy with atomic resolution

Nanolithography by non-contact AFM induced local oxidation : Fabrication of tunneling barriers suitable for single electron devices

Study on Nanofabrication with Dynamic Electrical-Field-induced Anodic Oxidation

Localized Breakdown in Dielectrics and Macroscopic Charge Transport Through the Whole Gate Stack: A Comparative Study

Combined Electric Field and Near-Field Scanning Optical Microscopy: Modification of Silicon Surfaces

Nanoscale Semiconductor Processes Using STM and AFM Lithographies. Fabrication of Nanometer-to-atomic-scale Structures Using STM and AFM.

Direct Atomic Imaging of Oxide Surfaces

Probing the Local Dielectric Function by Near Field Optical Microscopy Operating in the Visible Spectral Range

Nanoscale Characterization of Resistive Switching Using Advanced Conductive Atomic Force Microscopy Based Setups