Abstract:High-density embedded nonvolatile memory (eNVM) at advanced technology nodes is still in great demand for SOC chips used in consumer electronics, self-driving cars, industrial control, and IoT edge devices. Although embedded NOR Flash is still main stream, its process complexity and high integration cost make it difficult to scale beyond 28nm. RRAM has become a promising alternative owing to its excellent scalability, low power, and compatibility with logic processes [1 –6]. However, several challenges still exist that restrict RRAM from practical eNVM applications, as shown in Fig. 24.2.1. 1) a high supply voltage is needed, because of high operation voltages and a considerable voltage drop on write path. 2) The IR drop on write path varies significantly with the distance of a cell from the peripheral circuits. 3) Prior self-write termination (SWT), with its abrupt cutoff, fails to form dense conductive filaments (CFs). While delayed termination helps to alleviate this issue, its delay time is not optimized for fast and slow cells [3]. 4) Previous read reference schemes that use a small number of HRS/LRS cells may collapse when encountering tail bits, resulting in a poor reference [6]. In this work, we demonstrate a 1Mb 14nm-FinFET RRAM with a $0.022 \\mu m^{2}$ cell size. The cell array is in a deep N-well with adequate P-substrate biasing to alleviate the difficulty of high voltage transfer. Placing the bit line (BL) and source line (SL) drivers on the top and bottom of the array reduces the IR-drop variation for near and far cells. Self-adaptive delayed termination (SADT) adjusts the termination time according to cell characteristics (fast or slow), helping to generate robust CFs. A read reference with multiple dummy 1T1R cells avoids the reference collapse issue. The test chip supports reliable read operation at a minimum supply voltage of 0.5V from $-40^{\\circ}C$ to $125^{\\circ}C$.

JEDEC-Qualified Highly Reliable 22nm FD-SOI Embedded MRAM For Low-Power Industrial-Grade, and Extended Performance Towards Automotive-Grade-1 Applications

Highly Reliable and Manufacturable MRAM embedded in 14nm FinFET node.

A 3.75mb Embedded RRAM IP on 40nm High-Voltage CMOS Technology

A 14nm-Finfet 1mb Embedded 1t1r Rram With A 0.022 Mu M(2) Cell Size Using Self-Adaptive Delayed Termination And Multi-Cell Reference

A Dual Core Oxide 8T SRAM Cell with Low Vccmin and Dual Voltage Supplies in 45nm Triple Gate Oxide and Multi Vt CMOS for Very High Performance Yet Low Leakage Mobile SoC Applications

24.2 A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µm<sup>2</sup> Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference

A 0.127 Mu M(2) High Performance 65nm Soi Based Embedded Dram For On-Processor Applications

Highly Functional and Reliable 8mb Stt-Mram Embedded in 28nm Logic

40Nm Embedded Self-Aligned Split-Gate Flash Technology for High-Density Automotive Microcontrollers

A Logic-Process Compatible RRAM with 15.43 Mb/mm<sup>2</sup> Density and 10years@150°C retention using STI-less Dynamic-Gate and Self-Passivation Sidewall

Demonstration of a manufacturable SOT-MRAM multiplexer array towards industrial applications

BEOL Based RRAM with one extra-mask for low cost, highly reliable embedded application in 28 nm node and beyond

Demonstration of Highly Manufacturable STT-MRAM Embedded in 28nm Logic

A 0.13μm 64Mb HfO<inf>x</inf> ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement

Functionality Demonstration of a High-Density 2.5V Self-Aligned Split-Gate NVM Cell Embedded into 40nm CMOS Logic Process for Automotive Microcontrollers

World-most Energy-Efficient MRAM Technology for Non-Volatile RAM Applications

A 0.13 mu m 64Mb HfOx ReRAM Using Configurable Ramped Voltage Write and Low Read-Disturb Sensing Techniques for Reliability Improvement

Reliability Of 8mbit Embedded-Stt-Mram In 28nm Fdsoi Technology

A 28nm 1.5mb Embedded 1T2R RRAM with 14.8 Mb/mm2 Using Sneaking Current Suppression and Compensation Techniques

Logic-Based Mega-Bit CuxSiyO emRRAM with Excellent Scalability Down to 22nm Node for post-emFLASH SOC Era

Functionality Demonstration Of A High-Density 1.1v Self-Aligned Split-Gate Nvm Cell Embedded Into Lp 40 Nm Cmos For Automotive And Smart Card Applications