Highly Reliable and Manufacturable MRAM embedded in 14nm FinFET node.

S. Ko,J. H. Park,J. H. Bak,H. Jung,J. Shim,D. S. Kim,W. Lim,D.-E. Jeong,J. H. Lee,K. Lee,J.-H. Park,Y. Kim,C. Kim,J. H. Jeong,C. Y. Lee,S. H. Han,Y. Ji,S. H. Hwang,H. J. Shin,K. Lee,Y. J. Song,Y. G. Shin,J. H. Song
DOI: https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185248
2023-01-01
Abstract:We demonstrated highly reliable and manufacturable 16Mb magnetic random access memory (eMRAM) embedded in 14nm FinFET logic by achieving high yield over 90% at an operating temperature ranging from $-40^{\circ}\mathrm{C}$ to $125^{\circ}\mathrm{C}$ and passing the PKG reliability tests, such as HTOL and endurance 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> cycles. In addition, for automotive application and further scaling down, we confirmed the function of eMRAM macro at the elevated temperature of $160^{\circ}\mathrm{C}$, and achieved the low short fail of 1ppm level for sub 10nm eMRAM pitch using the novel patterning technology, respectively.
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