Abstract:Thermal induced reliability issues in ultra-high density storage arrays are becoming increasingly significant, especially in 3D stacks. In this paper, research into the reliability issues of a stacked 3D TaOx vertical resistive random access memory (VRRAM) is demonstrated first through experiments. The results indicate that the thermal induced reliability issues of a 3D VRRAM are very severe. To further study the thermal effect and its impact on a 3D VRRAM, finite element analysis models of the 3D VRRAM are established in CMOSOL Multiphysics. Parameters including different feature sizes (F), metal layer thickness (t(m)), isolation layer thickness (t(i)) and the number of stacked layers (N-s) are simulated and investigated to clarify the relationship between heat dissipation performance and the device's integration density. In addition to this, the influence of electrode materials is also discussed. The results reveal that scaling down F and t(m) are the main reasons for bad heat dissipation performance, and optimizing the thermal conductivity in both electrodes and the isolation layer can improve the heat dissipation performance. In addition, a comparative investigation into the heat dissipation performance in a 3D horizontal RRAM (HRRAM) has also been performed under the same conditions. Finally, by evaluating the influence of the integration parameters on the thermal effect related reliability performance, design guidelines for a 3D VRRAM and HRRAM are proposed.

Impacts of External Magnetic Field and High Temperature Disturbance on MRAM Reliability Based on FPGA Test Platform.

Electrothermal Effects on Reliability of Vertical Resistive Random Access Memory Array by Parallel Computing

Electrothermal Simulation of Resistive Random Access Memory(RRAM) Array Using Finite Difference Method

High-density Magnetoresistive Random Access Memory Operating at Ultralow Voltage at Room Temperature

Total Dose and Single Event Effects on 16 Mbit Standalone Spin-Transfer Torque MRAM with 45 nm CMOS Technology

Impact of external magnetic fields on STT-MRAM

Thermal Crosstalk in 3-Dimensional RRAM Crossbar Array

Uncovering Atomic Migrations Behind Magnetic Tunnel Junction Breakdown

Electrical and testing reliability of CuxO based RRAM

Reliability Simulation of TMO RRAM

Impact and Quantization of Short-Term Relaxation Effect in Analog RRAM

Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories

Challenges at circuit designs for resistive-type Nonvolatile memory and nonvolatile logics in mobile and cloud applications

Thermal Effect in Ultra-High Density 3D Vertical and Horizontal RRAM Array

Materials, Processes, Devices and Applications of Magnetoresistive Random Access Memory

Back-Side Stress to Ease p-MOSFET Degradation on e-MRAM Chips

The single event upset hardened design of spin transfer torque magnetic random access memory read circuits at 40 nm technology

Probing Write Error Rate and Random Telegraph Noise of MgO Based Magnetic Tunnel Juction Using a High Throughput Characterization System

Design of Spintronics Based MRAM with Comparative Analysis of MJT and Silicon MOSFET

Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability

Conduction mechanisms, dynamics and stability in ReRAMs