Enhancing simulation feasibility for multi-layer 2D MoS 2 RRAM devices: reliability performance learnings from passive network model
Seonjeong Lee,Yifu Huang,Yao Feng Chang,Seungjae Baik,Jack C Lee,Minsuk Koo
DOI: https://doi.org/10.1039/d4cp02669a
IF: 3.3
2024-07-20
Physical Chemistry Chemical Physics
Abstract:While two-dimensional (2D) MoS 2 has recently shown promise as a material for resistive random-access memory (RRAM) devices due to its demonstrated resistive switching (RS) characteristics, its practical application faces a significant challenge in industry regarding its limited yield and endurance. Our earlier work introduced an Effective Switching Layer model to understand RS behavior in both mono- and multi-layered MoS 2 . However, functioning as a phenomenological percolation modeling tool, it lacks the capability to accurately simulate the intricate current-voltage ( I-V ) characteristics of the device, thereby hindering its practical applicability in 2D RRAM research. In contrast to the established conductive filament model for oxide-based RRAM, the RS mechanism in 2D RRAM remains elusive. This paper presents a novel simulator aimed at providing an intuitive, visual representation of the stochastic behaviors involved in the RS process of multi-layer 2D MoS 2 RRAM devices. Building upon the previously proposed phenomenological simulator for 2D RRAM, users can now simulate both the I-V characteristics and the resistive switching behaviors of the RRAM devices. Through comparison with experimental data, it was observed that yield and endurance characteristics are linked to defect distributions in the MoS 2 .
chemistry, physical,physics, atomic, molecular & chemical