Abstract:High-density embedded nonvolatile memory (eNVM) at advanced technology nodes is still in great demand for SOC chips used in consumer electronics, self-driving cars, industrial control, and IoT edge devices. Although embedded NOR Flash is still main stream, its process complexity and high integration cost make it difficult to scale beyond 28nm. RRAM has become a promising alternative owing to its excellent scalability, low power, and compatibility with logic processes [1 –6]. However, several challenges still exist that restrict RRAM from practical eNVM applications, as shown in Fig. 24.2.1. 1) a high supply voltage is needed, because of high operation voltages and a considerable voltage drop on write path. 2) The IR drop on write path varies significantly with the distance of a cell from the peripheral circuits. 3) Prior self-write termination (SWT), with its abrupt cutoff, fails to form dense conductive filaments (CFs). While delayed termination helps to alleviate this issue, its delay time is not optimized for fast and slow cells [3]. 4) Previous read reference schemes that use a small number of HRS/LRS cells may collapse when encountering tail bits, resulting in a poor reference [6]. In this work, we demonstrate a 1Mb 14nm-FinFET RRAM with a $0.022 \\mu m^{2}$ cell size. The cell array is in a deep N-well with adequate P-substrate biasing to alleviate the difficulty of high voltage transfer. Placing the bit line (BL) and source line (SL) drivers on the top and bottom of the array reduces the IR-drop variation for near and far cells. Self-adaptive delayed termination (SADT) adjusts the termination time according to cell characteristics (fast or slow), helping to generate robust CFs. A read reference with multiple dummy 1T1R cells avoids the reference collapse issue. The test chip supports reliable read operation at a minimum supply voltage of 0.5V from $-40^{\\circ}C$ to $125^{\\circ}C$.

Functionality Demonstration of a High-Density 2.5V Self-Aligned Split-Gate NVM Cell Embedded into 40nm CMOS Logic Process for Automotive Microcontrollers

40Nm Embedded Self-Aligned Split-Gate Flash Technology for High-Density Automotive Microcontrollers

Functionality Demonstration Of A High-Density 1.1v Self-Aligned Split-Gate Nvm Cell Embedded Into Lp 40 Nm Cmos For Automotive And Smart Card Applications

Area-Efficient Integration of Embedded 0.5F0.5R Hybrid Memory and High Mobility Logic Device on Ge

A Dual Core Oxide 8T SRAM Cell with Low Vccmin and Dual Voltage Supplies in 45nm Triple Gate Oxide and Multi Vt CMOS for Very High Performance Yet Low Leakage Mobile SoC Applications

A 1.35-V 16-Mb Twin-Bit-Cell Virtual-Ground-Architecture Embedded Flash Memory with A Sensing Current Protection Technique

Novel Silicon-Based Flash Cell Structures for Low Power and High Density Memory Applications

Experimental Demonstration of the High-Performance Floating-Body/Gate DRAM Cell for Embedded Memories

A 280-Kbytes Twin-Bit-Cell Embedded NOR Flash Memory with a Novel Sensing Current Protection Enhanced Technique and High-Voltage Generating Systems

Novel SONOS and Floating-Gate Flash Memory Cell Structures for High Density and High Reliability Applications

Novel Vertical Channel Double Gate Structures for High Density and Low Power Flash Memory Applications.

A Fully Logic CMOS Compatible Non-Volatile Memory for Low Power IoT Applications

VDNROM: A novel four-physical-bits/cell vertical channel dual-nitride-trapping-layers ROM for high density flash memory applications

128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode.

VDNROM: A novel four-bits-per-cell vertical channel dual-nitride-trapping- layer ROM for high density flash memory applications

24.2 A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µm<sup>2</sup> Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference

Novel 15T SRAM Cell for Low Voltage High Reliability Application

A Logic-Based Embedded Dram With Novel Cell Structure And Dynamically Adaptive Refresh For Long Data Retention, Zero Data Availability Penalty And High Yield

Fabrication and optimization of aggressively scaled Dual-Bit/Cell Split-Gate Floating-Gate flash memory cell in 55-nm node technology

A 14nm-Finfet 1mb Embedded 1t1r Rram With A 0.022 Mu M(2) Cell Size Using Self-Adaptive Delayed Termination And Multi-Cell Reference

Device Scaling Considerations for Sub-90-nm 2-Bit/cell Split-Gate Flash Memory Cell