Abstract:1T1R spin-transfer-torque (STT) MRAM is a promising candidate for next-generation high-density embedded non-volatile memory [1-2]. However, 1T1R STT-MRAM suffers from limited sensing margin and high write power. As shown in Fig. 30.2.1(a), sense amplifier design is challenging due to the small difference (only 2x) between the high-resistance state (R AP ) and the low-resistance state (R P ), as well as R AP degradation with increasing temperature. Moreover, R P and R AP resistance distributions shift with process variation, requiring a read reference (V ref ) that tracks process. To improve the sensing margin, several offset-cancellation methods have been reported to reduce sense amplifier mismatch [3]. However, these methods use multiple capacitors and hence incur significant area overheads. To address this issue, we propose an offset-cancelled sense amplifier that uses only a single capacitor to significantly improve the sensing margin by more than 60%. A second design challenge for STT-MRAM stems from the high current needed to flip a cell during a write operation. For non-volatile memory applications with a 10-year retention time requirement, the write current can be as high as several hundred μA. However, as shown in Fig. 30.2.1(b), the required write time varies with the state change required (0→1 or 1→0), process variation, and temperature. As a result, a fixed write time that ensures successful write for all conditions wastes a significant energy for typical or average conditions. We propose an in situ write-self-termination method to reduce write energy in most scenarios. The sense amplifier is reconfigured to continuously monitor the write operation and automatically shuts off the write drivers when the state transition is detected, without an area or timing penalty. In addition, dual dummy columns are added in each array to provide read V ref tracking of row-wise PVT variation. A 1Mb STT-MRAM was fabricated in 28nm technology, and achieves a 2.8ns read-access time at 25°C and 3.6ns at 120°C, respectively. With in-situ self-write-termination the write power is reduced by 47% with a 20ns write-access time at 25°C and by 60% at 120°C.

Demonstration of Highly Manufacturable STT-MRAM Embedded in 28nm Logic

Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM

Demonstration of a manufacturable SOT-MRAM multiplexer array towards industrial applications

A Logic-Process Compatible RRAM with 15.43 Mb/mm<sup>2</sup> Density and 10years@150°C retention using STI-less Dynamic-Gate and Self-Passivation Sidewall

A Dual Core Oxide 8T SRAM Cell with Low Vccmin and Dual Voltage Supplies in 45nm Triple Gate Oxide and Multi Vt CMOS for Very High Performance Yet Low Leakage Mobile SoC Applications

A 1-Mb 28-Nm 1T1MTJ STT-MRAM with Single-Cap Offset-Cancelled Sense Amplifier and in Situ Self-Write-Termination

Reconfigurable Codesign of Stt-Mram under Process Variations in Deeply Scaled Technology

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

The fabrication of STT-MRAM memory cell with ultra-low switching power

A 1mb 28nm Stt-Mram With 2.8ns Read Access Time At 1.2v Vdd Using Single-Cap Offset-Cancelled Sense Amplifier And In-Situ Self-Write-Termination

A High Throughput In-MRAM-Computing Scheme Using Hybrid P-Sot-mtj/gaa-cntfet

A 3.75mb Embedded RRAM IP on 40nm High-Voltage CMOS Technology

Status and Outlook of Stt-Mram Development

A Novel 1T-DRAM Fabricated with 22 nm FD-SOI Technology

Addressing the Thermal Issues of STT-MRAM from Compact Modeling to Design Techniques

Integration of High-Performance Spin-Orbit Torque MRAM Devices by 200-Mm-wafer Manufacturing Platform

An 8kb 40-Nm 2T2MTJ STT-MRAM Design with 2.6ns Access Time and Time-Adjustable Writing Process

Yield and Reliability Improvement Techniques for Emerging Nonvolatile STT-MRAM

Channel Modeling and Reliability Enhancement Design Techniques for STT-MRAM

A Monolithic-3D SRAM Design with Enhanced Robustness and In-Memory Computation Support

First Demonstration of CMOS Inverter and 6T-SRAM Based on GAA CFETs Structure for 3D-IC Applications