Abstract:In this article, shielded and airgap-isolated through-silicon vias (TSVs) are fabricated and measured up to 50 GHz. The unique TSV configuration is low-loss and electrically shielded, and the fabrication process includes a trench encapsulation process, improving surface planarity. TSV is an essential technology in heterogeneous integration, allowing chip manufacturers to stack disaggregated chiplets in a cost-efficient manner. Today's mobile and networking needs are growing and require even faster communication links, calling for systems that can support higher frequency signals in the radio spectrum. Using standard semiconductor manufacturing processes, ring-shaped airgap trenches were etched and encapsulated, surrounding the 10- -diameter, 50- -tall signal TSV from its semicoaxial shielding TSVs. Once encapsulated, the surface is planar and allows subsequent photolithography steps to be performed. Simulation results showed that TSV shielding reduced noise coupling from −30.6 to −62.4 dB compared to GSG TSVs. Measurement results indicated that the airgap isolation reduced total capacitance from 12.9 to 7.95 fF, a 38.4% reduction, and conductance from 1.31 to 0.634 mS, a 51.6% reduction.

Research on Transmission Characteristics of Tapered Through Silicon Via in Signal Integrity

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Study on Transmission Characteristics of TSV

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Electrothermal modelling of through silicon via (TSV) interconnects

Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays

Modeling and Analysis of Signal Transmission with Through Silicon Via (TSV) Noise Coupling

Impact of Technology Scaling on Electrical Characteristics of Through-Silicon Via Correlated with Equivalent Circuits

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

A Rigorous Model for Through-Silicon Vias with Ohmic Contact in Silicon Interposer

Electrical Characterization of Coaxial Silicon–Insulator–Silicon Through-Silicon Vias: Theoretical Analysis and Experiments

Research on Crosstalk Issue of Through Silicon Via for 3d Integration

Modeling and Analyzing the Electrical Properties of Low Resistivity Silicon Through Silicon Via (TSV) in 2.5D Integrated Circuit

3D Modeling and Finite-Element Full-Wave Simulation of TSV for Stack Up SIP Integration Applications

Investigating the Tapered Profiles on the Parasitic Inductance of Through-Silicon Vias

Coaxial Through-Silicon-Vias Using Low-κ SiO2 Insulator

THz-wave propagation characteristics of TSV-based transmission lines and interconnects

Electrical Characterization of Shielded TSVs With Airgap Isolation for RF/mmWave Applications

Crosstalk Reduction in TSV Arrays with Direct Ohmic Contact Between Metal and Silicon-Substrate