Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

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Study on High-Resistance State Instability of TaOx-Based RRAM

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Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer.

Reset Instability in $\hbox{Cu}/\hbox{ZrO}_{2}$ :Cu/Pt RRAM Device

Impact of program/erase operation on the performances of oxide-based resistive switching memory.

Investigation on the RESET Switching Mechanism of Bipolar Cu/HfO2/Pt RRAM Devices with a Statistical Methodology

Study on ion dynamics of hafnium oxide RRAM by electrode thermal effect

Experimental Investigation Of The Scalability Of Rram Device With Pt/[Hfox/Aloy](M)/Tin Structure

A Method to Reduce Forming Voltage Without Degrading Device Performance in Hafnium Oxide-Based 1T1R Resistive Random Access Memory

Stable and repeatable ZrO 2 RRAM achieved by NiO barrier layer for negative set phenomenon elimination

Bias Temperature Instability of Binary Oxide Based ReRAM

Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfOx-based RRAM devices

Optimization of uniformity in resistive switching memory by reducing thermal effect

Localized Metal Doping Effect on Switching Behaviors of TaOx-based RRAM Device

Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer

Temperature Instability of Resistive Switching on <formula formulatype="inline"><tex Notation="TeX">$ \hbox{HfO}_{x}$</tex></formula>-Based RRAM Devices

Solving the issue of increasing forming voltage during device miniaturization in hafnium oxide-based resistive access memory using high-k sidewall material

Optimization of Conductive Filament of Oxide-Based Resistive-Switching Random Access Memory for Low Operation Current by Stochastic Simulation