Stable and repeatable ZrO 2 RRAM achieved by NiO barrier layer for negative set phenomenon elimination
Tangyou Sun,Fantao Yu,Chengcheng Li,Taohua Ning,Xingpeng Liu,Zhimou Xu,Zhiqiang Yu,Chunsheng Jiang,Haiou Li,Fabi Zhang,Qing Liao
DOI: https://doi.org/10.1016/j.sse.2024.108948
IF: 1.916
2024-05-05
Solid-State Electronics
Abstract:Resistive random-access memory (RRAM) is a promising non-volatile memory technology due to its fast operation, low power consumption, and high reliability. However, the negative set phenomenon remains a challenge for RRAM, which can lead to the deterioration of device switching parameters. In this study, we successfully addressed this issue by inserting a NiO blocking layer between the ZrO 2 and Ag top electrodes in ZrO 2 -based RRAM. In addition, the resistive switching characteristics of the device are significantly enhanced by the incorporation of a p-type oxide NiO layer. Compared to single-layer ZrO 2 devices, the double-layer Ag/NiO/ZrO 2 /ITO RRAM exhibits improved cycling durability (>500 cycles) and good retention time (3 × 10 4 s). Our analysis of the device conduction mechanism and proposed resistive switching model suggest that oxygen vacancies play a connecting role in the reset process, leading to failed reset behavior. Through the incorporation of a p-type semiconductor NiO layer into ZrO 2 -based RRAMs, the interference of oxygen vacancies on the reset process can be effectively impeded. This approach not only provides an effective resolution to the unforeseen negative set phenomenon in RRAM devices, but it also holds paramount significance for the advancement of high-performance RRAMs.
physics, condensed matter, applied,engineering, electrical & electronic