General Analytical Method for Investigating Parasitic Characteristics of Through Glass Vias (TGVs) in 3-D Integration
Wenlei Li,Jihua Zhang,Lingyue Wang,Libin Gao,Hongwei Chen,Zhen Fang,Xingzhou Cai,Yong Li,Weicong Jia,Huan Guo
DOI: https://doi.org/10.1109/ted.2023.3299461
IF: 3.1
2023-08-25
IEEE Transactions on Electron Devices
Abstract:Through glass via (TGV) is an essential complement to vertically interconnected components, which have emerged as a promising option for high-density, multifunctional, and miniaturized integration schemes. Far different from through silicon via (TSV), the manufacturing process of TGV determines the diversification of its morphological structures, such as hyperbolic, conical, and cylindrical. The hyperbolic TGV prepared by laser-induced etching technique is the representative and persuasive morphology structure for investigation. However, the published analytical and numerical analysis methods related to TGV only consulted from TSV, which are not comprehensive and deviated from the actual form, especially for hyperbolic structure. In this work, a general analytical method for extracting parasitic properties of hyperbolic TGV is proposed for the first time to facilitate the evaluation of the electrical performance. We deduce the parasitic parameters with the physical structure parameters as variables, and establish an equivalent circuit model considering the skin and eddy current effect. Furthermore, the analytical model is demonstrated and analyzed by the SPICE simulator (ADS), high-frequency structure simulator (HFSS), and measurement, showing high matchability and scalability from 0.1 to 40 GHz. Finally, the taper effect on parasitic parameters in the frequency domain is revealed.
engineering, electrical & electronic,physics, applied