Abstract:This paper investigates the electron and phonon transport and their implications for performance and reliability of single-walled carbon nanotube (SWCNT), double-walled carbon nanotube (DWCNT), and multiwalled carbon nanotube (MWCNT) vias-possibly the most imminent application of carbon nanotube (CNT)-based components in very large scale integration chips. Accurate resistance and thermal conductance models are provided for isolated CNTs, as well as bundles of these, based on detailed electrical and thermal transport physics in the submicrometer regime. It is found that although CNT vias are both electrically and thermally in the ballistic regime, their electrical and thermal performance still cannot match that of Cu via. While the large resistance of CNT vias may not be a significant concern for local interconnects, the resistance must be minimized to avoid degradation of global interconnect performance. Furthermore, detailed 3-D electrothermal simulations indicate that Joule heating and thermal contact resistance between CNTs and metal can be a major bottleneck in extracting the maximum thermal performance from ballistic CNT bundle vias. From a processing perspective, we show that the applicability of MWCNT vias, which are currently being fabricated, is severely limited by their large thermal and electrical resistance. For SWCNT- and DWCNT-based vias, small-diameter CNTs with dense packing as well as good thermal and electrical contact between CNT and metal are needed.

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High-Frequency Analysis of Cu-Carbon Nanotube Composite Through-Silicon Vias

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Electrical Modeling of Three-Dimensional Carbon-Based Heterogeneous Interconnects

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

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Modeling of Carbon Nanotube Interconnects and Comparative Analysis with Cu Interconnects

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Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects

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Circuit Modeling and Performance Analysis of Multi-Walled Carbon Nanotube Interconnects

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

Modeling of carbon nanotube (CNT) interconnects

PDN Impedance Modeling for Multiple Through Vias Array in Doped Silicon

Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration