Abstract:Reduced thermal budget is required for back-end-of-line (BEOL) integration of application specific functionality into the multilevel metal stack of a processor “substrate.” We report 400 °C BEOL-compatible Ge-on-Si growth (LT Ge) that is epitaxial and single crystalline with a defect density similar to high temperature growth and a small 0.05% tensile strain. Room temperature methanol–iodine passivation is employed pre-growth in lieu of the typical 800 °C oxide removal step. Undoped LT Ge exhibits p-type conductivity initially and n-type conductivity conversion upon annealing. Hall effect measurements following post growth heat treatment between 400 and 600 °C reveal an acceptor removal reaction that follows first-order kinetics with an activation energy of 1.7 ± 0.5 eV and a pre-exponential factor of 2.3×107 s−1 consistent with a point defect, diffusion limited process. We also observe that 90° sessile dislocations identified via transmission electron microscopy are annihilated in the same temperature regime, which is evidence for point defect-mediated climb. Ensuring high-quality epitaxy by characterizing defect reactions in a BEOL-compatible Ge-on-Si process flow is key to enabling vertical integration of optical interconnects.

Fabrication of Penetrating Pores in Epitaxial Ge-on-Si Through Preferential Etching along Threading Dislocations

Electrochemical Pore Etching in N- and P-Type Ge

Achieving Porous Germanium from Both P- and N-Type Epitaxial Ge-on-Si Via Bipolar Potentiostatic Etching

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Thermally Induced Surface Faceting on Heteroepitaxial Layers

Trapping Threading Dislocations in Germanium Trenches on Silicon Wafer

Tuning the Optical Anisotropy in Gradient Porous Germanium on Si Substrate

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Unpredicted Internal Geometric Reconfiguration of an Enclosed Space Formed by Heteroepitaxy

Heteroepitaxy of Ge on Si(001) with Pits and Windows Transferred from Free-Standing Porous Alumina Mask

Study of Si and Ge growth on Si(100) surface

Fabrication, Structural and Optical Properties of a Virtual GeSi Template by Ge Filling the Porous Si Prepared by EC Etching

Impacts of Doping on Epitaxial Germanium Thin Film Quality and Si-Ge Interdiffusion

Point defect–dislocation interactions in BEOL-compatible Ge-on-Si epitaxy

High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy

Fabrication of High Quality SiGe Virtual Substrates by Combining Misfit Strain and Point Defect Techniques

Selective CVD of germanium on silicon and its applications

N+/P Shallow Junction with High Dopant Activation and Low Contact Resistivity Fabricated by Solid Phase Epitaxy Method for Ge Technology

Epitaxy of SiGe HBT Structure by High Vacuum/Rapid Thermal Processing／Chemical Vapor Deposition

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Growth Mechanisms in Thin Film Epitaxy of Si/Sige from Hydrides