≪title>study on the Stress of Silicon Nitride Thin Films Prepared by PECVD</title>

Ying Yu,Zongzi Luo,Xinqiao Weng
DOI: https://doi.org/10.1117/12.607626
2004-01-01
Abstract:The residual stresses on silicon nitride thin films that were fabricated by PECVD were studied in this paper. A wafer-curvature measurement method was used to determine the stresses of silicon nitride films. The structure of fixed-fixed beam was also developed to compare with the stress measurement. The contributions of processing parameters on the stress of silicon nitride films were analyzed.
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