Measurements of Residual Stresses in the Parylene C Film/Silicon Substrate Using A Microcantilever Beam

Jyun-Siang Peng,Weileun Fang,Hung-Yi Lin,Chun-Hway Hsueh,Sanboh Lee
DOI: https://doi.org/10.1088/0960-1317/23/9/095001
2013-01-01
Journal of Micromechanics and Microengineering
Abstract:A series of Parylene C film/silicon substrate bilayer microcantilever beams were fabricated by microelectromechanical processes for the study of residual stresses. The Parylene C films of 2 µm thickness were deposited on the Si substrates with various thicknesses. After deposition at room temperature, deflection of the beam was observed with deposited Parylene C on the concave side. While Parylene C has a higher coefficient of thermal expansion than Si, this deflection is believed to result from the thermal mismatch between Parylene C and Si, and the temperature of monomer gas (which is formed at 690 °C) flowing across the sample could be higher than 25 °C. It is estimated to be 73 °C based on the fitting of the curvature versus substrate thickness relation between the measurements and analytical solutions. In this case, Parylene C films are subjected to tension. In addition, the residual stress in the Parlyene C film decreases with decreasing substrate thickness.
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