Abstract:Based upon GaN-on-Si wafers with a Al0.24Ga0.76N/AlN/GaN heterostructure, metal–semiconductor–metal photodetectors (MSM PDs) with nonplanar structure geometry are proposed for ultraviolet (UV) light detection. Although the presence of a highly conductive two-dimensional electron gas (2DEG) channel in the Al0.24Ga0.76N/AlN/GaN heterostructure is beneficial for realizing a high-electron-mobility transistor with a drain current of 600 mA/mm and a transconductance of 96 mS/mm, a high dark current is also observed in Schottky-barrier based MSM PDs. Using the nonplanar structure design for the MSM PDs (i.e., one Schottky contact formed on the top surface of the AlGaN mesa while the other is on the GaN buffer) achieves a significant decrease in PD’s dark current (<6 × 10−10 A). In addition, an anomalous increase in dark current of the proposed MSM PDs was found at forward bias, which could be attributed to the reduced potential barrier of the electrons in 2DEG and/or the lowering of the Schottky barrier height by hole trapping at the metal/semiconductor interface. Due to the improved signal to noise ratio and increased dissociation of the photogenerated carriers at the reverse junction (i.e., the reversely biased Schottky contact), the proposed MSM PDs operating at reverse bias exhibit enhanced UV photoresponsivity at λ < 360 nm. In addition to being used for UV light detection, these MSM PDs with a 3-dB bandwidth of 29.6 Hz are also useful for potential optical communications applications.

Properties of Photocurrent in GaN-based MSM Ultraviolet Photodetectors

Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

GaN MSM Photodetectors Fabricated on Bulk GaN with Low Dark‐current and High UV/visible Rejection Ratio

AlGaN-based metal–semiconductor–metal photodiodes fabricated with nonplanar structure geometry for ultraviolet light detection

AlGaN MSM UV Photodetector

Photocurrent Characteristics of Two-Dimensional-Electron-Gas-Based Algan/Gan Metal-Semiconductor-Metal Photodetectors

Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors

An Ultraviolet Photodetector Based On Gan/Si

High-performance Nonpolar A-Plane GaN-based Metal–semiconductor–metal UV Photo-Detectors Fabricated on LaAlO3 Substrates

Properties of Schottky Contact in MSM UV Detectors Based on AlGaN/GaN Heterostructure

Visible-Blind Metal-Semiconductor-Metal Photodetectors Based on Undoped AlGaN/GaN High Electron Mobility Transistor Structure

Metal-semiconductor-metal ultraviolet photodetectors directly fabricated on semi-insulating GaN:Fe template grown by hydride vapor phase epitaxy

Low-dark-current Metal-Semiconductor-metal Ultraviolet Photodetector Fabricated on Homoepitaxial GaN

Al 0.40 in 0.02 Ga 0.58 N Based Metal-Semiconductor-metal Photodiodes for Ultraviolet Detection

MSM Solar-Blind Ultraviolet Detector Incorporating Asymmetric Contact Electrodes Fabricated on AlxGa1–xN Hetero-Epilayers

Self-powered ultraviolet MSM photodetectors with high responsivity enabled by a lateral n<SUP>+</SUP>/n<SUP>-</SUP> homojunction from opposite polarity domains

Nonpolar (112̅0) GaN Metal–Semiconductor–Metal Photodetectors with Superior Performance on Silicon

An MSM photodetector based on an InGaO/TiO2 heterojunction for high-performance UV detection

Large-area solar-blind AlGaN-based MSM photodetectors with ultra-low dark current

Photoconductive GaN ultraviolet detector

Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors