Abstract:Based upon GaN-on-Si wafers with a Al0.24Ga0.76N/AlN/GaN heterostructure, metal–semiconductor–metal photodetectors (MSM PDs) with nonplanar structure geometry are proposed for ultraviolet (UV) light detection. Although the presence of a highly conductive two-dimensional electron gas (2DEG) channel in the Al0.24Ga0.76N/AlN/GaN heterostructure is beneficial for realizing a high-electron-mobility transistor with a drain current of 600 mA/mm and a transconductance of 96 mS/mm, a high dark current is also observed in Schottky-barrier based MSM PDs. Using the nonplanar structure design for the MSM PDs (i.e., one Schottky contact formed on the top surface of the AlGaN mesa while the other is on the GaN buffer) achieves a significant decrease in PD’s dark current (<6 × 10−10 A). In addition, an anomalous increase in dark current of the proposed MSM PDs was found at forward bias, which could be attributed to the reduced potential barrier of the electrons in 2DEG and/or the lowering of the Schottky barrier height by hole trapping at the metal/semiconductor interface. Due to the improved signal to noise ratio and increased dissociation of the photogenerated carriers at the reverse junction (i.e., the reversely biased Schottky contact), the proposed MSM PDs operating at reverse bias exhibit enhanced UV photoresponsivity at λ < 360 nm. In addition to being used for UV light detection, these MSM PDs with a 3-dB bandwidth of 29.6 Hz are also useful for potential optical communications applications.

Al 0.40 in 0.02 Ga 0.58 N Based Metal-Semiconductor-metal Photodiodes for Ultraviolet Detection

AlGaN MSM UV Photodetector

A Study of Al0.3Ga0.7N Metal-semiconductor-metal UV Photodiodes

Al x Ga 1- x N solar-blind photodetectors grown by low pressure MOCVD

Photoresponse Study of Visible Blind GaN/AlGaN P-I-n Ultraviolet Photodetector

AlGaN-based metal–semiconductor–metal photodiodes fabricated with nonplanar structure geometry for ultraviolet light detection

Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors

Low-dark-current Metal-Semiconductor-metal Ultraviolet Photodetector Fabricated on Homoepitaxial GaN

Photocurrent Property of GaN on the Si Photodetector with a Nearly Polycrystalline Α-Al2o3 Buffer Layer

Ultraviolet Detection Based on AlGaN/GaN Heterojunction under Low-Temperature

High-performance Nonpolar A-Plane GaN-based Metal–semiconductor–metal UV Photo-Detectors Fabricated on LaAlO3 Substrates

AlGaN-Based Ultraviolet PIN Photodetector Grown on Silicon Substrates Using SiN Nitridation Process and Step-Graded Buffers

Metal–semiconductor–metal GaN Ultraviolet Photodetectors on Si(111)

Visible-Blind Metal-Semiconductor-Metal Photodetectors Based on Undoped AlGaN/GaN High Electron Mobility Transistor Structure

An Ultraviolet Photodetector Based On Gan/Si

GaN MSM Photodetectors Fabricated on Bulk GaN with Low Dark‐current and High UV/visible Rejection Ratio

Polarization-Assisted AlGaN Heterostructure-Based Solar-Blind Ultraviolet MSM Photodetectors with Enhanced Performance

Low temperature atomic layer deposition of GaO x N y thin film on III-GaN:Mg for UV photodetector

Vacuum Violet Photo-Response of AlGaN-Based Metal-Semiconductor-Metal Photodetectors

Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

High Responsivity GaN Ultraviolet Photodetector