Abstract:Enhancement-mode (E-mode) buried <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-channel GaN metal-oxide-semiconductor field-effect-transistors (<inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN-MOSFET’s) with threshold voltage (<inline-formula> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula>) of −1.7 V, maximum ON-state current (<inline-formula> <tex-math notation="LaTeX">${I}_{\text {ON}}$ </tex-math></inline-formula>) of 6.1 mA/mm and <inline-formula> <tex-math notation="LaTeX">${I}_{\text {ON}}/{I}_{\text {OFF}}$ </tex-math></inline-formula> ratio of 10<sup>7</sup> are demonstrated on a standard <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN/AlGaN/GaN-on-Si power HEMT substrate. An oxygen plasma treatment (OPT) was deployed to the gated <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN region where a relatively thick (i.e. 31 nm) GaN is retained without aggressive gate recess. The OPT converts the top portion of the GaN layer to be free of holes so that only the bottom portion remains <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-type while being spatially separated from the etched GaN surface and gate-oxide/GaN interface. As a result, E-mode operation is enabled while a high-quality <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-channel is retained. Multi-energy fluorine ion implantation was implemented for planar isolation of GaN <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-channel FETs with mesa edges and sidewalls eliminated. Consequently, high <inline-formula> <tex-math notation="LaTeX">${I}_{\text {ON}}/{I}_{\text {OFF}}$ </tex-math></inline-formula> ratio is obtained.

High Performance Normally-off Al2O3/GaN MOSFETs with Record High Threshold Voltage by Interface Charge Engineering

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

Interface charge engineering on an in situ SiN x /AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance

Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High- $\kappa$ Dielectric

CMOS-compatible Ehancement-Mode GaN-on-Si MOS-HEMT with High Breakdown Voltage (930V) Using Thermal Oxidation and TMAH Wet Etching

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

A high breakdown voltage AlGaN/GaN MOSHEMT using thermal oxidized Al-Ti as the gate insulator

Improved Performance of Enhancement-Mode GaN MIS-FET Based on a Self-Terminating Gate Recess Etching Technique with in Situ NH3 Pre-Treatment

Study on High Breakdown Voltage GaN-based Vertical Field Effect Transistor with Interfacial Charge Engineering for Power Applications

NiO/AlGaN interface reconstruction and transport manipulation of p-NiO gated AlGaN/GaN HEMTs

High Threshold Voltage Stability Enhancement-Mode GaN p-FETs Fabricated With PEALD-AlN Gate Interfacial Layer

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer

900 V/1.6 Normally Off MOSFET on Silicon Substrate

Enhancement‐Mode Β‐ga2o3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing

Enhancement-mode GaN-on-Silicon MOS-HEMT using pure wet etch technique

High V th and Improved Gate Reliability in P-GaN Gate HEMTs with Oxidation Interlayer

Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering

Improved Device Performance in AlGaN/GaN HEMT by Forming Ohmic Contact with Laser Annealing

Improved Performance of Fully-Recessed High-Threshold-Voltage GaN MIS-HEMT with in Situ H₂/N₂ Plasma Pretreatment

High <inline-formula> <tex-math notation="LaTeX">${I}_{\text{ON}}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${I}_{\text{ON}}$ </tex-math></inline-formula>/<inline-formula> <tex-math notation="LaTeX">${I}_{\text{OFF}}$ </tex-math></inline-formula> Ratio Enhancement