Abstract:In this article, a fully integrated 1.0-11.0-GHz wideband distributed power amplifier (DPA) monolithic microwave integrated circuit (MMIC) design is presented. Particularly, a coupled technique with bandpass (CTB) characteristic between the k th output node and the ( k+1 )th input node of amplification units (AUs) is adopted in the DPA design. It generates an additional signal reuse path (SRP) to reuse part of the output signal to superimpose the input signal, and then they will be reamplified to the output artificial transmission line (O-ATML). Moreover, due to the bandpass characteristic, the signal reuse can be manipulated to target the upper cutting edges of the working band to alleviate sharp gain and power roll-off. By carefully controlling the SRP, the overall gain, output power, and bandwidth are enhanced and extended. The systematic design approach for the DPA is detailed with circuit implementations and optimizations. To validate the proposed concept, a DPA MMIC prototype is implemented and fabricated in a commercial 0.25- mu m gallium nitride (GaN)-on-silicon carbide (SiC) high-electron-mobility transistor (HEMT) process. It shows the compact layout within a die size of 3.36 mm(2). Under 28-V VDD power supply, the measured results show a flat 14.8 +/- 1.0-dB small-signal gain with 10.0-GHz wide operating bandwidth and good impedance matching conditions. A saturated output power ( P sat ) of 7.25 W with peak power-added efficiency (PAE) exceeding 38.7% is achieved. The proposed DPA obtains around 1.54-2.16-W/mm(2) power density associated with an average PAE of 34.5% over the entire frequency range.

Progress in the Development of Power Amplifiers Based on AlGaN/GaN HEMT's

MMIC Class-F Power Amplifiers Using Field-Plated AlGaN/GaN HEMTs

Research Progress on AlGaN/GaN-based HEMT

High-Efficiency Class-E Power Amplifier Using Field-Plated Ganhemts

Microwave Class-F and Inverse Class-F Power Amplifiers Designs Using GaN Technology and GaAs Phemt

Mmic Class-F Power Amplifiers Using Field-Plated Ganhemts

Recent Advances in GaN‐Based Power HEMT Devices

Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier

GaN Integrated Circuit Power Amplifiers: Developments and Prospects

Microwave Class-E GaN Power Amplifiers

Two-stage quasi-class-E power amplifier in GaN HEMT technology

A review of GaN HEMT broadband power amplifiers

Ka-band 1 W GaN MMIC Power Amplifier Design

High-Efficiency AlGaN/GaN/Graded-AlGaN/GaN Double-Channel HEMTs for Sub-6G Power Amplifier Applications

Gain and Power Enhancement with Coupled Technique for a Distributed Power Amplifier in 0.25-$\Mu$m GaN HEMT Technology

Design and Implementation of a 1-2 GHz Wideband GaN Power Amplifier

A Fully Integrated Broadband, High-Gain, High-Power and High-Efficiency UHF Amplifier Using GaAs HBT and GaN HEMT.

High power applications for GaN-based devices

Evaluation of Power and Linearity at 30 GHz in AlGaN/GaN HEMT Fabricated by Integrating Transistors With Multiple Threshold Voltages

Design of GaN Based Multi-Octave Wideband Power Amplification Circuit

Design of Inner Matching Three-Stage High-Power Doherty Power Amplifier Based on GaN HEMT Model