Abstract:The gallium nitride (GaN) high-electron-mobility transistor (HEMT) has emerged as the dominant force in highfrequency solid-state power amplifiers (PAs) both in base stations of wireless communication and T/R modules of radar. GaN HEMT devices exhibit high power densities coupled with high breakdown voltages, and have opened up the possibilities for highly efficient PAs exploiting the principles of waveform-engineered designs. Due to the fast development and maturation of the process, GaN HEMT technology has become a major enabler for both very broadband high-PAs and very high-efficiency designs. At the same time, the accurate large-signal models for both discrete transistors and monolithic microwave integrated circuit foundry are highly desirable to ensure high performance and first-pass success design of GaN circuits. This special issue focuses on the current state of the art of GaN HEMT device modeling consisting of physicalbased model and behavioral-based model. Broadband and energy-efficient microwave devices and circuits are included in this special issue. Papers dealing with GaN HEMT models, high efficiency power amplifier and transmitter design methodologies based on GaN HEMT device, GaN based MMIC design, related to potential practical applications, were solicited. In this special, we have accepted 9 papers after peer review, which cover the topics of GaN HEMT device modeling, GaN based circuit design as well as linearization techniques. Accurate modeling of GaN device is the basis for sucessful design, 5 papers about this topic are included in this issue such as “Charge density and bare surface barrier height in GaN/AlGaN/GaN heterostructures: A modeling and simulation study”, “Bayesian Inference Based Small-Signal Modeling Technique for GaN HEMTs”, “Pulsed I/V and S-parameters Measurement System for Isodynamic Characterization of Power GaN HEMT Transistors”, “Thermal Analysis of Microwave GaN-HEMTs in Conventional and Flip-Chip Assemblies”, “Low complexity Output Generalized Memory Polynomial model for Digital Pre-Distortion of RF Power Amplifiers”. Furthermore, 4 papers about GaN circuits design are also accepted in this issue including “18 -31GHz GaN Wideband LNA Using a 0.1μm T -Gate HEMT Process”, “Investigation of Load Modulated Inverse Class -F Power Amplifier With Extended Conduction Angle”,” A Post -Matching Concurrent Dual -Band Doherty Power Amplifier with Enhanced Bandwidth”, “A Wideband Two-Stage Doherty Power Amplifier at high Back-off by Exploring Feasible Design Space” . The broad range of GaN HEMT modeling and circuits are explored in this special issue testifies the vibrant research activity and commercial interest on innovative GaN HEMT devices and circuits to address the consequent engineering challenges.

A review of GaN HEMT broadband power amplifiers

Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review

GaN Integrated Circuit Power Amplifiers: Developments and Prospects

X-Band High-Efficiency Continuous Class B Power Amplifier Gan Mmic Assisted By Input Second-Harmonic Tuning

A Broadband High-Efficiency Quasi Class E Internally-matched GaN Power Amplifier with a Compact Band-Pass Output Matching Structure

The Design and Analysis of a 25-Watt Broad-Band GaN HEMT-Based Power Amplifier

A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications

Design of GaN Based Multi-Octave Wideband Power Amplification Circuit

Recent Advances in GaN‐Based Power HEMT Devices

A High-Efficiency Class-E GaN HEMT Power Amplifier at 1.9 GHz

Special Issue on GaN HEMT Modeling and Circuits

GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

Review of GaN HEMT Applications in Power Converters over 500 W

Evaluation of Linearity at 30 GHz for N-polar GaN Deep Recess Transistors with 10.3 W/mm of Output Power and 47.4% PAE

Progress in the Development of Power Amplifiers Based on AlGaN/GaN HEMT's

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

A Fully Integrated Broadband, High-Gain, High-Power and High-Efficiency UHF Amplifier Using GaAs HBT and GaN HEMT.

Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors

High‐efficiency broadband power amplifier design via ideal de‐embedding and direct compensation of GaN‐HEMTs parasitics

A High Efficiency C-Band Internally-Matched Harmonic Tuning Gan Power Amplifier

Development of broadband amplifier based on GaN HEMTs