Design of GaN Based Multi-Octave Wideband Power Amplification Circuit

Xie Xiaofeng,Xiao Shiwei,Zheng Guiqiang

DOI: https://doi.org/10.3969/j.issn.1003-353x.2013.05.008

2013-01-01

Abstract:With the development of third generation semiconductor GaN,GaN based power devices are more and more widely applied in many electronic systems.These devices can be competitive candidates in power amplification since they have the advantages of high breakdown voltage and large output power density.According to its own characteristic,a GaN high electron mobility transistor(HEMT)was employed to design a 0.5-4 GHz wideband power amplifier using the reactive matched method with the ADS simulation software basing on its large signal model.The measured results show that the power amplifier can work in a 0.5-4 GHz frequency range with a linear gain larger than 8.5 dB with a gain flatness of ±1.3 dB.In this frequency range,the saturated output power is larger than 7 W,and the maximum power added efficiency(PAE)of each frequency are larger than 22%.Specifically,the saturated output power and maximum PAE of each frequency in 1-3.75 GHz is above 10 W and 40%.