Development of broadband amplifier based on GaN HEMTs

Song Lin,Murat Eron,Sean Turner

DOI: https://doi.org/10.1109/wamicon.2011.5872894

2011-04-01

Abstract:Two types of broadband amplifier based on GaN HEMTs are presented in this paper. The feedback amplifier design has achieved over 42 dB gain with $\pm 1.75\ {\bf dB}$ flatness and higher than 32 dBm ${\bf P}_{1{\rm dB}}$ over 30 MHz to 4 GHz. Both theoretical predictions and measurement results will be presented. This PA was designed and fabricated using discrete GaN transistor die with chip & wire technology. The distributed amplifier design is optimized to achieve greater than 38 dBm of ${\rm P}_{1{\rm dB}}$ output power with higher than 15 dB linear gain, while having good port match and better than $\pm$ 1 dB gain flatness over 20 MHz to 6 GHz.