A High-Efficiency Class-E GaN HEMT Power Amplifier at 1.9 GHz

HT Xu,S Gao,S Heikman,SI Long,UK Mishra,RA York

DOI: https://doi.org/10.1109/lmwc.2005.861355

IF: 3

2006-01-01

IEEE Microwave and Wireless Components Letters

Abstract:A single stage class-E power amplifier in GaN high electron mobility transistor (HEMT) technology is reported. The circuit operates at 1.9 GHz. At 30-V drain bias, a power-added-efficiency (PAE) of 57% and a maximum output power of over 37 dBm was achieved, corresponding to a power density of 5.25 W/mm. At 40-V drain bias, an output power of 38.7 dBm is achieved at 50% PAE corresponding to a power density of 7.4 W/mm.