A Fully Integrated Broadband, High-Gain, High-Power and High-Efficiency UHF Amplifier Using GaAs HBT and GaN HEMT.
Ruirong Hao,Xiaodong Zhang,Feng Wang,Huai Gao,Jianchun Cheng,Guann-Pyng Li
DOI: https://doi.org/10.1587/elex.14.20170639
2017-01-01
IEICE Electronics Express
Abstract:This paper presents a compact high-gain, high-efficiency, and broadband (higher than one octave) UHF high-power amplifier (HPA) using gallium arsenide (GaAs) and gallium nitride (GaN) technologies, the broadband HPA was fully integrated in a monolithic microwave integrated circuit (MMIC) with input and output matched to 50 Omega, the total size of the HPA is only 10 x 10 mm(2). It generates a power gain higher than 44 dB, a continuous wave (CW) output power greater than 10W and a corresponding power added efficiency (PAE) better than 55 percent across the full band from 220 similar to 520 MHz. This design approach for high power GaN in space saving plastic package is enabling system designers to overcome the challenge to reduce the size, weight, and cost of system designs, while meeting the requirements of higher power, efficiency and reliability.