Class F and Inverse Class F Dual Modes Dual Bands Power Amplifier

Yang Fei,Yu Hongxi,Liu Ruizhu,He Xinyang,Zhang Anxue,Jin Zhonghe
DOI: https://doi.org/10.1109/iws49314.2020.9360107
2020-01-01
Abstract:In this paper, the design and implementation of a dual bands power amplifier using gallium nitride (GaN) high electron mobility transistor (HEMT) is presented. A methodology of realizing Class F and Inverse Class F dual bands power amplifier output topology is proposed. With simulation and measurement verification, the dual bands power amplifier gets good performances in L band and S band, 1.4GHz and 2.1GHz respectively. At the P -2 point, the output powers are higher than 41.3dBm and 41.2dBm, and generate more than 72% and 69% drain efficiency in the two 200MHz operation bands. Simulation and measurement results agree well with each other, verified the concept and method proposed in the paper.
What problem does this paper attempt to address?