Abstract:Interface trapping is one of the most notorious effects that limit device performance in GaN-based MIS high electron mobility transistors (MISHEMTs). In this paper, we present a comprehensive study on interface traps in AlGaN/GaN MISHEMTs using low pressure chemical vapor deposition SiNx as gate dielectric. We combined the trapping analysis in MIS diodes and actual MISHEMTs to estimate the interface trap state densities (D-it) and their distributions in the device, and to investigate their influence on device electrical properties. Two types of interface traps with different emission time constants, designated as "slow" and "fast" traps, were identified and characterized by means of pulse-mode current-voltage measurements and a frequency dependent conductance method. It was found that "fast" traps located in the device access region could be effectively restrained by passivation using plasma enhanced chemical vapor deposition SiNx. However, "slow" traps, no matter whether located beneath the metal gate or in the access region, were less influenced by passivation. Due to the strong interference of traps in the access region, Dit extraction using the conventional conductance method was not accurate for the lateral GaN-based MIS diodes. A modified small-signal equivalent circuit that includes the impedance of traps in the access region is proposed. Proper passivation for the device access region is essential when using the conductance method for GaN-based MIS devices.

A Study on the Surface Trap Effect on 4H-Sic MESFET's

Two-dimensional analysis of the surface trap effect on gate lag phenomena in 4H-SiC MESFET

Simulation of Surface State Effects in the Transient Response of 4H-Sic Mesfets

Two-dimensional analysis of the surface state effects in 4H-SiC MESFETs

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current

Two-dimensional Analysis of the Gate–source Distance Scaling Effects in 4H-Sic MESFETs

Study of the Influence of Different Gate Oxide Traps on Threshold Voltage Drift of SiC MOSFET Based on Transient Current

Transient Characteristics of Back-Gated Multilayer MoS2 and WSe2 Channel N-Type Metal Oxide Semiconductor Field Effect Transistors: A Comparative Study

Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx As Gate Dielectric

Energy-Localized Near-Interface Traps Active in the Strong-Accumulation Region of 4H-Sic MOS Capacitors

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

Simulation of Threshold Voltage Instability of 4H-Sic MOSFET

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET

A Simulation Study of Interface Traps Effects of Magnetic Sensitivity in Sectorial SD-MAGFET

Impact of Interface Trap Charges on Silicon Carbide (4H-SiC) Based Gate – Stack, Dual Metal, Surrounding Gate, FET (4H-SiC- GSDM-SGFET) for Analog and Noise Performance Analysis for 5G/LTE Applications

Spice modeling of 4H-SiC MOSFET based on the advanced mobility model

Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit model

Static Surface States and Bulk Traps in AlGaN/GaN HEMT Including Hot Electron and Quantum Effects

Effect of Surface and Interface on the Back-Gated N-Mosfet with Two-Dimensional MoS2 Channel Grown by Chemical Vapor Deposition