Abstract:Publication date: 31 May 2023 Source: Materials Science Forum Vol. 1090 Author(s): Aleksandr Vasilev, Maximilian Wolfgang Feil, Christian Schleich, Bernhard Stampfer, Gerhard Rzepa, Gregor Pobegen, Tibor Grasser, Michael Waltl We investigated oxide and interface defects of lateral 4H-SiC MOSFETs through capacitance-voltage (C-V) and conductance-voltage (G-V) characterization at various frequencies and temperatures. By employing consecutive up and down sweeps of the gate voltage at three different temperatures, we experimentally characterized the hysteresis width as the difference between up and down sweeps in the depletion to accumulation (d-a) and depletion to inversion (d-i) regions. We observed an increase in the hysteresis width with decreasing temperature. Although the hysteresis width is not affected by the small-signal frequency, at the same time, increasing the frequency leads to a strong stretch-out effect, especially in the d-i region.Our measurement results indicate that the hysteresis deformation of the C-V curves is dominated by three different trap types. First, interface acceptor-like defects located close to the conduction band can follow the small-signal frequency. Slower acceptor-like border traps with trap levels both close to the conduction band and in the middle of the band gap are however responsible for the increase of trapped negative charge with increasing gate voltage. Finally, we assume the presence of a fixed positive charge.

Simulation of Surface State Effects in the Transient Response of 4H-Sic Mesfets

Two-dimensional analysis of the surface state effects in 4H-SiC MESFETs

A Study on the Surface Trap Effect on 4H-Sic MESFET's

Two-dimensional analysis of the surface trap effect on gate lag phenomena in 4H-SiC MESFET

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Two-dimensional Analysis of the Gate–source Distance Scaling Effects in 4H-Sic MESFETs

A Simulation Study of Interface Traps Effects of Magnetic Sensitivity in Sectorial SD-MAGFET

Simulation of Threshold Voltage Instability of 4H-Sic MOSFET

Two-dimensional Analysis of the Interface State Effect on Current Gain for a 4H-Sic Bipolar Junction Transistor

Simulation Study of Single Event Effects in the SiC LDMOS with a Step Compound Drift Region

Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current

Transient Characteristics of Back-Gated Multilayer MoS2 and WSe2 Channel N-Type Metal Oxide Semiconductor Field Effect Transistors: A Comparative Study

Spice modeling of 4H-SiC MOSFET based on the advanced mobility model

Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations

Energy-Localized Near-Interface Traps Active in the Strong-Accumulation Region of 4H-Sic MOS Capacitors

The effect of the surface recombination on current gain for 4H-SiC BJT

Modeling of SiC MOSFET Behavior in Short-circuit Transient Considering Gate Leakage Current

Simulation of improved 3D tri-gate 4H-SiC MESFETs with recessed drift region

Electro-Thermal Analytical Model and Simulation of the Self-Heating Effects in Multi-Finger 4H-Sic Power Mesfets

Surface Acceptor-Like Trap Model for Gate Leakage Current Degradation in Lattice-Matched Inaln/Gan Hemts

Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET