Abstract:With the advantages of higher blocking voltage, higher operation temperature, fast-switching characteristics, and lower switching losses, the silicon carbide (SiC) MOSFET has attracted more attentions and become an available replacement of traditional silicon (Si) power semiconductor in applications. Despite of all the merits above, electromagnetic interference (EMI) issues will be induced consequently by the ultra-fast switching transitions of the SiC MOSFET. To quickly and precisely assess the switching behaviors of the SiC MOSFET for EMI investigation, an analytical model is proposed. This model has comprehensively considered most of the key factors, including parasitic inductances, non-linearity of the junction capacitors, negative feedback effect of L, and C-gd shared by the power and the gate stage loops, non-linearity of the trans-conductance, and skin effect during voltage and current ringing stages, which will considerably affect the switching performance of the SiC MOSFET. Additionally, a finite-state machine (FSM) is especially utilized so as to analytically and intuitively describe the switching behaviors of the SiC MOSFET via State-flow. Based on double pulse test (DPT), the effectiveness and correctness of the proposed model are validated through the comparison between the calculated and the measured waveforms during switching transitions. Besides, the model can appropriately depict the spectrum of the drain-source voltage of the MOSFET and is suitable for EMI investigation in applying of SiC devices.

Spice modeling of 4H-SiC MOSFET based on the advanced mobility model

Physical Analysis and Modeling of the Nonlinear Miller Capacitance for SiC MOSFET.

Analytical Modeling of the Silicon Carbide (sic) MOSFET During Switching Transition for EMI Investigation

A Datasheet-Driven Nonsegmented Empirical SPICE Model of SiC MOSFET with Improved Accuracy and Convergence Capability

Analytical Modeling Of Switching Characteristics Of The Sic Mosfet Based On Finite State Machine

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Establishment and Simulation Analysis of SiC MOSFET SPICE Model

An Accurate and Effective Spice Model of 6.5kv SiC MOSFET with Parasitic Parameters Analysis in Medium-Voltage Power Module

Analytical Modeling of SiC MOSFET During Switching Transient

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Advances in Inversion Channel Mobility Model for 4H-SiC MOS Devices

Modeling of the Influence on Effective $\textit{v}_{\text{th}}$ from Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs

SPICE Modeling of Three Novel SiC MOSFETs with Integrated Junction-Barrier-Schottky Diode

Modeling of SiC MOSFET with temperature dependent parameters and its applications

A Highly Automated and Rapid Datasheet Driven Empirical Modeling Process of SiC MOSFETs with High Accuracy and Robust Convergence.

Modeling of Sic Mosfet in Matlab/Simulink

Modeling of carrier scattering in MOS inversion layers with large density of interface states and simulation of electron Hall mobility in 4H-SiC MOSFETs

Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence

The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET

A Temperature-Dependent SiC MOSFET Modeling Method Based on MATLAB/Simulink

A Novel Compact Model of Gate Capacitance for SiC MOSFET with Easy Parameter Extraction Method