Abstract:At cryogenic temperatures, carrier mobility in bulk silicon exhibits a significantly different temperature dependence compared with that at room temperature. To capture this difference and accurately calculate cryogenic carrier mobility in technology computer-aided design (TCAD) simulation, we have developed a physics-based analytical mobility model. The proposed model is built upon two components: ionized impurity scattering and neutral impurity scattering. The ionized impurity scattering component is developed within the unified Klaassen's mobility model framework, which also incorporates other scattering mechanisms such as lattice scattering and carrier-carrier scattering. To overcome the limitations of Klaassen's model below 100 K, we incorporated the nonlinear screening effect and used the variable phase approach (VPA), a robust method for calculating minority impurity mobility. The neutral impurity scattering component adopts an existing practical model, which accurately captures the effect of scattering by neutral impurities at low temperatures. Our model exhibits good match to the experimental data on both majority and minority carrier mobility. Above 100 K, our model can be simplified to the original Klaassen's mobility model, demonstrating its compatibility with the existing models at higher temperatures. In cryogenic bulk silicon simulations, our model exhibits good convergence performance and accuracy, making it applicable in cryogenic device simulations.

Advances in Inversion Channel Mobility Model for 4H-SiC MOS Devices

Modeling of carrier scattering in MOS inversion layers with large density of interface states and simulation of electron Hall mobility in 4H-SiC MOSFETs

Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis

Revealing the Scattering Mechanisms of Mobility Degradation in Ultrathin Body SOI Pmosfets

Phonon-limited carrier mobilities and Hall factors in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> -SiC from first principles

Phonon-limited carrier mobilities and Hall factors in <i>4H-SiC</i> from first principles

Modeling of the Influence on Effective $\textit{v}_{\text{th}}$ from Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs

Channel Electron Mobility in 4h–sic Lateral Junction Field Effect Transistors

High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face

Mos Interface And Channel Engineering For High-Mobility Ge/Iii-V Cmos

A New Anisotropic Driving Force Model for SiC Device Simulations

Experimental and theoretical study on anisotropic electron mobility in 4H‐SiC

Wafer-Level Hall Measurement on Sic Mosfet

Mobility Enhancement Techniques for Ge and GeSn MOSFETs

A Unified Mobility Model for Cryogenic Bulk Silicon Simulations in Wide Doping Range

Rigorous Modeling and Investigation of Low-Field Hole Mobility in Silicon and Germanium Gate-All-Around Nanosheet Transistors

New Mobility Model for Accurate Modeling of Transconductance in FDSOI MOSFETs

Characterization and Modelling of Carrier Distribution and Gate Capacitance in MOS Structure Inversion Layer

Carrier Mobility Enhancement in Ultrathin-Body InGaAs-on-Insulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Based on Dual-Gate Modulation

Numerical Electron Mobility Model of Nanoscale Symmetric, Asymmetric and Independent Double-Gate Mosfets

A carrier-based analytic DCIV model for long channel undoped cylindrical surrounding-gate MOSFETs