Abstract:<p>Radiative and non-radiative charge carrier recombination in thin-film diodes plays a key role in determining the efficiency of electronic devices made of next generation semiconductors such as organic, perovskite and nanocrystals. In this work, we show that lowering the bulk recombination does not necessarily result in enhanced performance metrics of electronic devices. From the perspective of charge carrier extraction and injection, the radiative limit of the open-circuit voltage of solar cells, noise current of photodetectors and lasing threshold of injection lasers cannot be improved if the contacts are not perfectly selective. A numerical drift-diffusion model is used to investigate the interplay between bulk recombination and surface recombination of minority carriers at the contacts in bipolar thin diode devices based on low-mobility semiconductors. The surface recombination becomes prominent in case of reduced bulk recombination strengths when non-selective contacts, i.e., contacts that are either metallic or have imperfect charge-selective interlayers, are employed. Finally, we derive analytical approximations for the case when diffusion-limited surface recombination of minority carriers at Ohmic contacts dominates the dark current. These results indicate that having perfectly selective contacts becomes crucial in systems with suppressed bulk recombination – a challenging requirement for the future state-of-the-art thin-film solar cells, light-emitting devices and photodetectors made of next generation semiconductors.</p>

The effect of the surface recombination on current gain for 4H-SiC BJT

Influence of surface centers on the effective surface recombination rate and the parameters of silicon solar cells

Surface-Passivation Effects on the Performance of 4H-Sic BJTs

A New Method of Improving the Current Gain of 4H-SiC Lateral BJTs

A novel structure of a high current gain 4H-SiC BJT with a buried layer in the base

Experimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTs

Relating Gain Degradation to Defects Production in Neutron-Irradiated 4H-Sic Transistors

Silicon Surface Tunnel Transistor

Novel 4H-SiC bipolar junction transistor (BJT) with improved current gain

A Novel 4H-Sic Lateral Bipolar Junction Transistor Structure with High Voltage and High Current Gain

Irradiation Effects on DC Current Gain of SiGe HBT

Characterization of Neutral Base Recombination for SiGe HBTs

Space-charge-region recombination currents in AlGaAs/GaAs graded heterojunction bipolar transistors

Degradation Differences in the Forward and Reverse Current Gain of 25 Mev Si Ion Irradiated Sige Hbt

Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation

Influence of Heterojunction Position on SiGe HBTs with Graded BC Junctions

Modeling for the collector current in SOI gate-controlled hybrid transistor

On the effect of surface recombination in thin film solar cells, light emitting diodes and photodetectors

Effects of Co-60 Gamma-Ray Irradiation on the DC and RF Characteristics of SiGe HBTs

Effects of Different Factors on Single Event Effects Introduced by Heavy Ions in SiGe Heterojunction Bipolar Transistor: A TCAD Simulation

Multilayer Epitaxial Growth and Fabrication of 4H-SiC BJT with Double Base Epilayers