Abstract:Bipolar junction transistor (BJT), one important circuit element in the integrated circuits, is now widely used in high-speed computation and communication for its capability of high-power signal amplification. 2D materials and their heterostructures are promising in building high-amplification and high-frequency BJTs because they can be naturally thin and highly designable in tailoring components properties. However, currently the low emitter injection efficiency results in only moderate current gain achieved in the pioneer researches, severely restraining its future development. Herein, we show an elaborately designed double heterojunction bipolar transistor (DHBT) can greatly promote the injection efficiency, improving the current gain by order of magnitude. In this DHBT we use high-doping-density wide-bandgap 2D Cu9S5 as emitter and narrow-bandgap PtS2 as base. This heterostructure efficiently suppress the current ratio of reverse electron flux from base and increase the injection efficiency. By exploiting this high injection efficiency, our DHBT experimentally achieves an excellent common-base current gain (α = ~0.996) and common-emitter current gain (β = ~910). This work systematically explores the electrical behavior of 2D materials based DHBT, and provides deep insight of the architecture design for building high gain DHBT, which may promote the applications of 2D-materials based heterojunctions in the fields of integrated circuits.This article is protected by copyright. All rights reserved

A novel structure of a high current gain 4H-SiC BJT with a buried layer in the base

A Novel 4H-Sic Lateral Bipolar Junction Transistor Structure with High Voltage and High Current Gain

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Novel 4H-SiC bipolar junction transistor (BJT) with improved current gain

A New Method of Improving the Current Gain of 4H-SiC Lateral BJTs

A Novel High-Voltage Trench Gate Insulated Gate Bipolar Transistor With Diffusion Remnant Layer

Silicon Carbide Bipolar Junction Transistor with Novel Emitter Field Plate Design for High Current Gain and Reliability

Bipolar-Transistor Action from an Amorphous Carbon/Silicon Heterojunction Emitter

High Power 4 H-SiC Bipolar Junction Transistor

Enhanced On-State Performance Trench IGBT with a Self-Aligned P Base

2D Cu 9 S 5 /PtS 2 /WSe 2 Double Heterojunction Bipolar Transistor with High Current Gain

1836 V, 4.7 Mω•cm2 High Power 4H-Sic Bipolar Junction Transistor

A novel 4H-SiC IGBT structure with improved trade-off between short circuit capability and on-state voltage drop

5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension

1836 V, 4.7 mΩ•cm<sup>2</sup> High Power 4H-SiC Bipolar Junction Transistor

Multilayer Epitaxial Growth and Fabrication of 4H-SiC BJT with Double Base Epilayers

GaN-Based Double-Heterojunction Bipolar Transistors With a Composition Graded p-InGaN Base

Silicon Surface Tunnel Transistor

A Novel Double-poly Self-aligned High-voltage Power SiGe HBT

A novel high-performance junctionless 4H-SiC trench MOSFET with improved switching characteristics

A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region