Abstract:Silicon Carbide (SiC) is becoming increasingly of interest to the power electronics industry due to its superior characteristics such as high critical electric field, larger bandgap and higher thermal conductivity in comparison to Silicon (Si). Taking advantage of these material properties, high voltage devices could be fabricated with lower power losses and high temperature and frequency operability, which could surpass the limits enforced by Si power devices. SiC BJTs in particular are advantageous for the medium to high-voltage application range (e.g. HVDC multi-level converters) as they exhibit lower on-state losses while maintaining superior switching performance. The only drawback is being a current driven device in contrast to voltage-controlled SiC MOSFETs. Therefore, devices with a large current gain (β) are highly desirable for simplifying the base drive. In this paper, a novel circular structure with improved β has been demonstrated. Although the material quality of epilayers and surface passivation layer are the most significant factors limiting β, the geometrical design also plays a vital role in achieving a higher β. Therefore, the influence of the emitter geometry on β and the Rittner effect have been discussed by comparing rectangular and circular cell structures, with the aid of the software Sentaurus TCAD.

1836 V, 4.7 mΩ•cm<sup>2</sup> High Power 4H-SiC Bipolar Junction Transistor

1836 V, 4.7 Mω•cm2 High Power 4H-Sic Bipolar Junction Transistor

High Power 4 H-SiC Bipolar Junction Transistor

3kV 6.7mΩ·cm<sup>2</sup> 4H-SiC BJT with An Effective Junction Termination Extension (JTE)

A Novel 4H-Sic Lateral Bipolar Junction Transistor Structure with High Voltage and High Current Gain

3kV 6.7mΩ·cm2 4H-SiC BJT with An Effective Junction Termination Extension (JTE)

4H-Sic BJT Characterization at High Current High Voltage

Novel 4H-SiC bipolar junction transistor (BJT) with improved current gain

High Current Gain 4H-Sic Bipolar Junction Transistor

430-V 12.4- $hboxmomegacdot Hboxcm^2$ Normally off 4H-Sic Lateral JFET

5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension

A High Performance 4H-Sic Normally-off VJFET

High Current Gain 4H-Sic BJT for Limiting Surface States Effect

Research on an Improved Junction Termination Structure for 4H-SiC BJTs

Bidirectional Current 4h‐sic VJFET

1000-V 9.1- $\hbox{m}\Omega \cdot \hbox{cm}^{2}$ Normally Off 4H-SiC Lateral RESURF JFET for Power Integrated Circuit Applications

Low Ron,sp.diff and Ultra-high Voltage 4H-Sic N-Channel IGBTs with Carrier Lifetime Enhancement Process

Silicon Carbide Bipolar Junction Transistor with Novel Emitter Field Plate Design for High Current Gain and Reliability

Design and Characterization of 10 kV High Voltage 4H-SiC p-Channel IGBTs with Low VF

A New Method of Improving the Current Gain of 4H-SiC Lateral BJTs

Novel 4h‐sic BJT Utilizing Floating Buried Layer in Base for High Current Gain, High Current Gain Stability and High Breakdown Voltage

1836 V, 4.7 mΩ•cm&lt;sup&gt;2&lt;/sup&gt; High Power 4H-SiC Bipolar Junction Transistor