Abstract:Silicon Carbide (SiC) is becoming increasingly of interest to the power electronics industry due to its superior characteristics such as high critical electric field, larger bandgap and higher thermal conductivity in comparison to Silicon (Si). Taking advantage of these material properties, high voltage devices could be fabricated with lower power losses and high temperature and frequency operability, which could surpass the limits enforced by Si power devices. SiC BJTs in particular are advantageous for the medium to high-voltage application range (e.g. HVDC multi-level converters) as they exhibit lower on-state losses while maintaining superior switching performance. The only drawback is being a current driven device in contrast to voltage-controlled SiC MOSFETs. Therefore, devices with a large current gain (β) are highly desirable for simplifying the base drive. In this paper, a novel circular structure with improved β has been demonstrated. Although the material quality of epilayers and surface passivation layer are the most significant factors limiting β, the geometrical design also plays a vital role in achieving a higher β. Therefore, the influence of the emitter geometry on β and the Rittner effect have been discussed by comparing rectangular and circular cell structures, with the aid of the software Sentaurus TCAD.

5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension

3kV 6.7mΩ·cm<sup>2</sup> 4H-SiC BJT with An Effective Junction Termination Extension (JTE)

3kV 6.7mΩ·cm2 4H-SiC BJT with An Effective Junction Termination Extension (JTE)

A Novel 4H-Sic Lateral Bipolar Junction Transistor Structure with High Voltage and High Current Gain

Research on an Improved Junction Termination Structure for 4H-SiC BJTs

Novel 4H-SiC bipolar junction transistor (BJT) with improved current gain

4H-Sic BJTs with Epitaxial Junction Termination Composite Structure

1836 V, 4.7 mΩ•cm<sup>2</sup> High Power 4H-SiC Bipolar Junction Transistor

High Power 4 H-SiC Bipolar Junction Transistor

High Current Gain 4H-Sic Bipolar Junction Transistor

1836 V, 4.7 Mω•cm2 High Power 4H-Sic Bipolar Junction Transistor

Silicon Carbide Bipolar Junction Transistor with Novel Emitter Field Plate Design for High Current Gain and Reliability

Sidewall-Implanted Trench Termination for 4H-SiC Devices With High Breakdown Voltage and Low Leakage Current

Novel 4h‐sic BJT Utilizing Floating Buried Layer in Base for High Current Gain, High Current Gain Stability and High Breakdown Voltage

A New Method of Improving the Current Gain of 4H-SiC Lateral BJTs

Normally-off trench JFET technology in 4H silicon carbide

High Current Gain 4H-Sic BJT for Limiting Surface States Effect

Design Consideration and Fabrication of 1.2-Kv 4H-Sic Trenched-And-Implanted Vertical Junction Field-Effect Transistors

Implantation-free SiC Thyristor with Single-Mask 3D Termination Near 10 Kv

4.15 Kv / 4.6 Mω·cm2 4H-Sic Epi-refilled Super-Junction Schottky Diode with Ring Assisted Super-Junction Termination Extension

Improved Etched Multistep JTE for UHV SiC Power Devices