Abstract:Abstract We deposited high-quality molybdenum disulfide (MoS 2 ) monolayer and multilayer crystals on SiO 2 /Si substrates, by means of a chemical vapor deposition (CVD) process at atmospheric pressure. Notably, NaCl salt was used as component of the precursors to assist the growth of MoS 2 crystals, which were intended for use as the active channel layer in the fabrication of field-effect transistors (FETs). The resulting MoS 2 crystals from this CVD process were analyzed by optical, scanning electron, and atomic force microscopies, and by Raman and photoluminescence spectroscopies. The optical images and the micrographs obtained by SEM revealed the formation of dispersed MoS 2 crystals with a triangular shape all over the SiO 2 surface. The thickness of the MoS 2 crystals, analyzed by atomic force microscopy, showed minimum values of around 0.7 nm, confirming the formation of monolayers. Additionally, multilayers with larger thickness were also identified. The Raman and photoluminescence spectra of the MoS 2 crystals corroborated the formation of single and multiple layers. The fabrication of the FET back-SiO 2 -gate configuration was made by depositing patterned source and drain Ti contacts on the dispersed MoS 2 crystals to achieve the Ti/MoS 2 /SiO 2 /Si layer stacks. MoS 2 -based FETs with one and three layers were assembled and their electrical response analyzed by I–V output and transfer curves showing the typical characteristics of an n -type semiconductor channel operating in depletion mode. The electrical performance parameters of the devices, such as mobility and threshold voltage, were also determined from this analysis. Finally, to enhance their electrical response, the MoS 2 -based devices were thermally annealed at 200 °C for 30 min in Ar atmosphere. The increase in the mobility of the device was 176% compared to the device before the treatment.

Effect of Surface and Interface on the Back-Gated N-Mosfet with Two-Dimensional MoS2 Channel Grown by Chemical Vapor Deposition

Surface Effect on the Current-Voltage Characteristics of Back-Gated MoS2 Channel MOSFET

Transient Characteristics of Back-Gated Multilayer MoS2 and WSe2 Channel N-Type Metal Oxide Semiconductor Field Effect Transistors: A Comparative Study

Experimental Investigation on the Back-Gate Modulation of Extra-Thin Body Pmosfets

Effects of Charge Trapping at the MoS2–SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Investigation of Traps at MoS2/Al2O3Interface in Nmosfets by Low-Frequency Noise

Electrical Characterization of Back-Gated Bi-Layer MoS2 Field-Effect Transistors and the Effect of Ambient on Their Performances

Charge Trapping At The Mos2-Sio2 Interface And Its Effects On The Characteristics Of Mos2 Metal-Oxide-Semiconductor Field Effect Transistors

Two-dimensional analysis of the surface state effects in 4H-SiC MESFETs

The Effect of a Vacuum Environment on the Electrical Properties of a MoS2 Back-Gate Field Effect Transistor

Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS<sub>2</sub> Transistors

Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

Process implications on the stability and reliability of 300 mm FAB MoS 2 field-effect transistors

Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering

Thickness Dependence of Low-Frequency Noise in MoS 2 Field-Effect Transistors with Enhanced Back-Gate Control

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Distinguishing the Charge Trapping Centers in CaF2-Based 2D Material MOSFETs

Distinguishing the importance of different charge trapping centers in CaF2-based 2D material MOSFETs

Effect of Thickness and Thermal Treatment on the Electrical Performance of 2D MoS2 Monolayer and Multilayer Field-Effect Transistors

A Study on the Surface Trap Effect on 4H-Sic MESFET's