Abstract:The ever-shrinking electrostatic capacitor with its high dielectric permittivity and ferroelectric polarization can store large quantities of electrical charge and energy for compact electronics and electrical power systems, leading to applications including volatile/nonvolatile high-storage-density memories and energy-efficient complementary metal-oxide-semiconductor (CMOS) devices. Innovative use of CMOS-compatible HfO 2 -based materials with high permittivities of 27–52 and polarizations of 17–50 μC/cm 2 could foster their integration into few-nanometre-scale devices. Here we report giant remanent polarization of 331 μC/cm 2 for a 0.3-μm-sized Hf 0.5 Zr 0.5 O 2 thin-film capacitor, combined with ultrahigh linear permittivity of ≥921, stored charge density of 295 μC/cm 2 and energy density of 566 J/cm 3 within a 4.4-μm-sized capacitor when the material’s ferroelectricity disappears suddenly after polarization fatigue, much better than relaxor ferroelectric thin films (133–152 J/cm 3 ). The giant polarization originates from formation of high-density Zr-rich polar clusters near the edge region of the Hf 0.5 Zr 0.5 O 2 thin-film capacitor after plasma treatment and remains unchanged at low temperatures. This enables high-density integration of extremely scaled logic and memory devices for low-voltage operation.

Ferroelectric Polarization Assisted Trapping Memcapacitor

Excellent ferroelectric Hf0.5Zr0.5O2 thin films with ultra-thin Al2O3 serving as capping layer

A Study on the Hf0.5Zr0.5O2 Ferroelectric Capacitors Fabricated with Hf and Zr Chlorides

Enhanced Memory Properties of HfO2-based Ferroelectric Capacitor by Inserting Al2O3/ZrO2 Stack Interfacial Layer

Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-ferroelectric Zirconia Seed Layer for Memory Applications

A Novel Hafnia-based Ferroelectric Capacitor with Antiferroelectric Zirconia Seed Layer for High Ferroelectricity and Endurance

MoS2-based Ferroelectric Field-Effect Transistor with Atomic Layer Deposited Hf0.5Zr0.5O2 Films Toward Memory Applications

High performance and nearly wake-up free Hf 0.5 Zr 0.5 O 2 ferroelectric capacitor realized by middle layer strategy with BEOL compatibility

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Ultrahigh Dielectric Permittivity and Ferroelectric Polarization in Size-Scaled Hf0.5Zr0.5O2 Thin-Film Capacitors

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films

Charge Trapping Memory Characteristics of P-Si/ultrathin Al[sub 2]o[sub 3]∕(hfo[sub 2])[sub 0.8](al[sub 2]o[sub 3])[sub 0.2]∕al[sub 2]o[sub 3]/metal Multilayer Structure

A Silicon-Based Ferroelectric Capacitor for Memory Devices

Integration and Electrical Properties of Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Film on Bulk $\beta$ -Ga 2 O 3 (−201) Substrate for Memory Applications

High Performance and Nearly Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Capacitor Realized by Middle Layer Strategy with BEOL Compatibility

Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility

Ferroelectric capacitors with triple level cell storage capability at low operating voltage by introducing TiN interlayer

A Stable Rhombohedral Phase in Ferroelectric Hf(Zr)1+xO2 Capacitor with Ultralow Coercive Field.

Ferroelectric Transistors with Monolayer Molybdenum Disulfide and Ultra-Thin Aluminum-Doped Hafnium Oxide

Memory Effect of Metal—Insulator—Silicon Capacitors with SiO<sub>2</sub>/HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Dielectrics