Abstract:Although 2D metal and semiconductor materials provide a promising solution to realize ohmic contacts, the additional van der Waals (vdW) gap inevitably induces a large tunneling barrier, significantly restraining the charge transport. By effectively replacing the vdW bond with the covalent bond at 2D interfaces, weakening the tunneling barrier and realizing Ohmic contacts can be achieved simultaneously. 2D metal and semiconductor materials provide a promising solution to realize Ohmic contacts by suppressing the strong Fermi level pinning (FLP) effect due to without dangling bonds. However, the 2D metal‐semiconductor Van der Waals (vdW) interfaces induce an inevitable tunnel barrier, significantly restraining the injection of charge carriers into the conduction channel. Herein, by replacing the vdW bond with the covalent bond in interfaces, the Ohmic and tunneling‐barrier‐inhibition contacts are realized simultaneously based on the 2D XSi2N4 (X = Cr, Hf, Mo, Ti, V, Zr) semiconductor and the 2D Mxene metal family. Taking 60 2D Mxene‐XSi2N4 contacts as examples, although the vdW‐type contacts exhibit Ohmic contacts, the tunneling probability (PTB) can be as low as 0.4%, while the PTB can increase to 88.09% by removing the Mxene terminations at the adjacent interface to form the covalent bond. The weak FLP and Ohmic contacts are retained at covalent bond interfaces since the outlying Si─N sublayer protects the band‐edge electronic states of XSi2N4 semiconductors. This work provides a straightforward strategy for advancing high‐performance and energy‐efficient 2D electronic nanodevices.

Enhancing the Contact Performance of Two-Dimensional Metals/In2S3 Junctions by the Self-Repair of Sulfur Vacancies in Air

Enhancing the Contact Performance of Two-Dimensional Metals/In 2 S 3 Junctions by the Self-Repair of Sulfur Vacancies in Air

Suppressing the vdW Gap‐Induced Tunneling Barrier by Constructing Interfacial Covalent Bonds in 2D Metal–Semiconductor Contacts

Theoretical study of metal contacts to the monolayer ferroelectric material CuInP2S6 and its device applications

Interfacial Defect Engineering on Electronic States and Electrical Properties of MoS2/metal Contacts

Non-invasively Improving the Schottky Barrier of MoS2/metal Contacts by Inserting a SiC Layer

Approaching Ohmic Contacts for Ideal Monolayer MoS2 Transistors Through Sulfur-Vacancy Engineering

H2S assisted contact engineering: a universal approach to enhance hole conduction in all TMD Field-Effect Transistors and achieve ambipolar CVD MoS2 Transistors

2D Metal Enabled Weak Fermi Level Pinning Effect and Tunable Charge Injection in Contacts with Inorganic 2D Perovskites

Tuning the metal–semiconductor contact nature in MXene-based van der Waals heterostructures

Electrical contacts to few-layer MoS 2 with phase-engineering and metal intercalation for tuning the contact performance

Improving 2D Schottky Contacts Using an Intralayer Strategy

Defected BN Substrate Induces the Transition from Schottky to Ohmic Contact in Two-Dimensional Metals–Semiconductor Junctions

Engineering Schottky-to-Ohmic contact transition for 2D metal–semiconductor junctions

Mechanistic Understanding of the Interfacial Properties of Metal-PtSe2 Contacts

Electrical Contacts to Few-Layer MoS2 with Phase-Engineering and Metal Intercalation for Tuning the Contact Performance

Designing Efficient Metal Contacts to Two-Dimensional Semiconductors MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers

Tunable Contact Types and Interfacial Electronic Properties in TaS2/MoS2 and TaS2/WSe2 Heterostructures

Bridging the gap between atomically thin semiconductors and metal leads

Contact Engineering for Two-Dimensional Semiconductors

Junction-configuration-dependent interfacial electronic states of a monolayer MoS2/metal contact