Abstract:We study the preparation of high-quality p-type tunnel oxide passivated contact (p-TOPCon) using plasma-enhanced chemical vapor deposition (PECVD) technology in this work. We propose to use different plasmas to treat the ultrathin SiOx to improve the passivation quality of p-TOPCon. Experimentally, we use the nitric acid oxidation (NAOS) SiOx as the precursor and use pure N2, pure H2, and N2O/H2 plasmas to treat the SiOx precursor layer. Three observations are found. 1) Pure H2 plasma treatment can improve the SiOx quality by increasing the Si4+ content, but the passivation quality is not improved because of the etching effect of H2 plasma and the reduction of SiOx thickness. 2) The pure N2O plasma can improve the passivation quality but increases the contact resistivity (ρ c ) because of the increase of the SiOx thickness. 3) The N2O/H2 plasma treatment improves the passivation quality more effectively than pure N2O plasma, and meanwhile, it also keeps the contact resistivity at an acceptable value for high-efficiency solar cells. We assume that the atomic H provides the energy to etch the weak and dangling bonds and make SiOx thinner, while the atomic O that makes SiOx thickness unchanged balances the etching effect of atomic H. With the optimized N2O/H2 plasma treatment, the passivation quality of p-TOPCon is improved, featuring the best implied open-circuit voltage (iV oc) of ∼732 mV and the lowest single-sided saturation current density (J 0,s ) of ∼6 fA/cm2 on the lifetime sample with the n-type silicon substrate and the AlOx/SiNx capping layer. These results demonstrate that the plasma treatment is a promising way to boost the passivation quality of PECVD p-TOPCon structures. Finally, as an example, we use numerical simulation to predict the performances of the solar cells integrating the p-TOPCon structure on the rear side of n-c-Si and demonstrate a 24.8% efficiency with the p-TOPCon whose SiOx is improved by the optimized plasma treatment.

Chemically Active Plasmas for Surface Passivation of Si Photovoltaics

High-Density Plasma-Enhanced Chemical Vapor Deposition Of Si-Based Materials For Solar Cell Applications

Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition

Improved Silicon Surface Passivation by ALD Al2O3/SiO2 Multilayers with In‐Situ Plasma Treatments

Si Surface Passivation By Siox:H Films Deposited By A Low-Frequency Icp For Solar Cell Applications

In situ Photoluminescence Study of Plasma Effects on Passivation of Crystalline Silicon Coated with Aluminum Oxide

Role of Hydrogen Plasma Pretreatment in Improving Passivation of the Silicon Surface for Solar Cells Applications

Application of SiO2 Passivation Technique in Mass Production of Silicon Solar Cells

Controllable A-Si:H/c-si Interface Passivation by Residual SiH4 Molecules in H-2 Plasma

Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2.

Effective Passivation of Black Silicon Surfaces via Plasma‐Enhanced Chemical Vapor Deposition Grown Conformal Hydrogenated Amorphous Silicon Layer

Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices

RF Magnetron Sputtering Aluminum Oxide Film for Surface Passivation on Crystalline Silicon Wafers

Impact of Post-deposition Plasma Treatment on Surface Passivation Quality of Silicon Nitride Films

Radicals and Ions Controlling by Adjusting the Antenna-Substrate Distance in A-Si:H Deposition Using A Planar Icp for C-Si Surface Passivation

Mechanisms of Silicon Surface Passivation by Negatively Charged Hafnium Oxide Thin Films

Enhancement of Electrical Properties of Nanostructured Polysilicon Layers Through Hydrogen Passivation

Anisotropic etching behavior and topography formation mechanism of silicon solar cell surface textured by atmospheric plasma

Plasma treatment for chemical SiOx enables excellent passivation of p-type polysilicon passivating contact featuring the lowest J of ∼6 fA/cm2

SiO2 Passivation Layer Grown by Liquid Phase Deposition for Silicon Solar Cell Application

Plasma Treatment for Chemical SiOx Enables Excellent Passivation of P-Type Polysilicon Passivating Contact Featuring the Lowest J0 Of-6 Fa/cm2