Abstract:Compared to other methods, we present the benefits of the Continuous Cellular Automaton (CCA) to describe in a simple and flexible manner anisotropic wet chemical etching of GaN as a combination of step flow and terrace erosion. In fact, the simplicity of the approach enables accounting for epitaxial growth of GaN based on the equivalent perspective of step flow and terrace filling (or build-up). A key ingredient is the direct removal/deposition of GaN groups of atoms, which directly enables describing etching/growth via the removal/deposition of a small number of different crystallographic cell types, each with a different removal/deposition rate. We focus on the derivation of mathematical expressions for the etch rates of the surface orientations contained in the crystallographic zone as a function of the removal rates of the various cell types, then describing their use also for growth. A least squares approach is used to determine optimal values for the removal/deposition rates of the various cell types. For the first time, Focused Ion Beam (FIB) etching is used to manufacture a well-known, vertically micromachined wagon-wheel structure for subsequent use in wet etching, thus enabling a comparison between the CCA-derived etch rates and the experimental values. For growth, the comparison is performed against data from the literature. The combination of average step flow and average terrace erosion/filling, as inherently contained in the CCA method, explains well the anisotropy of both etching and growth of GaN in the crystallographic zone.

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Etch and growth rates of GaN for surface orientations in the crystallographic zone: Step flow and terrace erosion/filling via the Continuous Cellular Automaton

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