Arrier Transport and Emitter Transit Lysilicon Emitter Bipular Transistors

Yi Luo,S. J. Wang

1993-01-01

Abstract:Polysilicon emitter bipolar transistors have received extensive theoretical and experimental investigation in the past years for their two major advantages of high switching speed [1]-[4] and high current gain [5]-[9]. Various models have also been proposed to explain these phenomena. In this work, an analytical theory is presented to describe the minority carrier transport in the polysilicon-contacted emitters. This model includes drift-diEusion in the arbitrary doped singIe crystal emitter region, tunneling and thermionic-emission at the polysilicodsilicon interface, and diffusion in the low mobility plysilicon emitter region. Based on Ng [SI and Yung's [IO] suggestions, dopant segregation effect has been considered at the polysiliconlsilicon interface. The expression of the base current contains three terms in the emitter Gummel number, which indicates the individual contributions of three mechanisms (Fig. 1) to the current gain improvement. It is shown that the interfacial segregation and transport through the polysilicon layer have the great influence on the base current reduction and current gain enhancement.