Abstract:In this paper, systematic characterization and the corresponding suppression strategies of dynamic OFF-state leakage current ( ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ ) in Schottky-type p-GaN gate high-electron-mobility transistors (HEMTs) are presented based on fast pulsed ${I}$ – ${V}$ measurement and consecutive switching measurement. It is found that the high ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ under dynamic pulse mode without hole injection is a result of the reduced voltage blocking capabilities (both lateral and vertical) with weaker trapping effect in the buffer, and the dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ induced by ON-state hole injection is caused by further increased lateral conductivity through the buffer from source to drain. The corresponding behaviors under continuous waveforms with different switching conditions are analyzed to identify effective approaches for the suppression of dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ in practical switching operations. A higher temperature is shown to be beneficial to the reduction of the dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ induced by ON-state hole injection. To completely eliminate the dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ caused by ON-state hole injection and minimize the OFF-state power consumption in practical power switching applications, a sufficiently large negative OFF-state gate bias (e.g., ${V}_{\text {GS}, \mathrm{\scriptscriptstyle OFF}}\le -{3}$ V) is recommended in the gate driver turn-off voltage design for the Schottky-type p-GaN gate HEMTs.

On the Abnormal Reduction and Recovery of Dynamic RON under UIS Stress in Schottky P-Gan Gate HEMTs

On the Abnormal Reduction and Recovery of Dynamic R ON under UIS Stress in Schottky p-GaN Gate HEMTs

Off-state Avalanche-Breakdown-induced On-Resistance Degradation in SGO–NLDMOS

Device Model and Energy Loss Mechanism of Enhancement-Mode P-Gan HEMTs under Unclamped-Inductive-Switching Stress

Investigation of Saturated RON on GaN Power HEMTs by a Re-Configurable Continuous Switching Platform

Analysis of Energy Loss in GaN E-Mode Devices Under UIS Stresses

V T Shift and Recovery Mechanisms of p-GaN Gate HEMTs Under DC/AC Gate Stress Investigated by Fast Sweeping Characterization

Recoverable Current Collapse Effect of p-GaN HEMTs Under Short Circuit Stress

Reverse Current Stress Induced Dynamic Ron of GaN HEMTs in Soft-Switching Mode

Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress

The ID Instability Induced by Reverse Conduction Stress in P-Gan Gate HEMTs

Physical insight into the abnormal V TH instability of Schottky p -GaN HEMTs under high-frequency operation

Charge Detrapping on Gate Edge of AlGaN/GaN HEMT Under Drain Stress

The I D Instability Induced by Reverse Conduction Stress in p-GaN Gate HEMTs

Investigation of Dynamic ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ under Switching Operation in Schottky-Type P-Gan Gate HEMTs

Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type P-Gan Gate HEMTs

Design and Development of P-Gan Gate HEMT with Schottky Source Extension for Improved Short-Circuit Reliability

Study on the Dynamic R<sub>on</sub> Degradation in GaN-based Power HEMT

Characterization of Dynamic $i_{\text{off}}$ in Schottky-Type $P$-Gan Gate HEMTs