Abstract:SiC, as one typical 3rd generation semiconductor, has high potential to be used as the substrate for harsh environment sensors. However, the etching of this material is still challenging. Femtosecond laser has been demonstrated to have great potential in SiC etching, but the material removal mechanisms need further investigation. Herein, the two-temperature model considering carrier concentration is utilized to illustrate the microscopic mechanism of carrier concentration and temperature change in SiC caused by femtosecond laser irradiation. An 800 nm, 50 fs, 10 Hz Ti: sapphire femtosecond laser was used to process SiC in different media including air, HF and water. The ablation threshold of SiC in the three media is calculated. The highest ablation threshold (4.98 J/cm(2)) is obtained when the pulse number N = 50, in air. The lowest ablation threshold (0.53 J/cm(2)) is obtained when the pulse number N = 300, in HF. Results indicate that ablation threshold is strongly dependent on the laser pulse number and processing medium. Based on the cleavage phenomenon of SiC crystal structure observed by micro-nano characterization, the mechanism model of femtosecond laser-induced periodic structure of SiC surface based on material lattice cleavage is established, and the relationship between the intrinsic texture and the evolution of periodic structure of ablation surface is revealed. This will provide a new way to understand the ablation mechanism of femtosecond laser. In addition, the processing media has significant effect on surface roughness and chemical bond characteristics of SiC. Liquid processing media can reduce the surface roughness and avoid oxidation, which is helpful to manufacture SiC devices with specific surface requirements using femtosecond laser as an auxiliary method.

Femtosecond Laser Modification of Silicon Carbide to Improve the Materials Removal Efficiency

Femtosecond laser surface modification of 4H-SiC improves machinability

Femtosecond laser modification of silicon carbide substrates and its influence on CMP process

Crystal Cleavage, Periodic Nanostructure And Surface Modification Of Sic Ablated By Femtosecond Laser In Different Media

High-Power Femtosecond Laser Processing of SiC Ceramics with Optimized Material Removal Rate

Ablation Threshold and Material Removal Mechanisms of SiC Processed by Femtosecond Laser

Investigation of structural transformation and residual stress under single femtosecond laser pulse irradiation of 4H–SiC

Influence of surface morphology on processing of C/SiC composites via femtosecond laser

Modifying single-crystal silicon and trimming silicon microring devices by femtosecond laser irradiation

Study of Femtosecond Laser Ablation and Polishing Process on 4H-SiC Substrate

Experimental and Simulation Research on Femtosecond Laser Induced Controllable Morphology of Monocrystalline SiC

High speed and low roughness micromachining of silicon carbide by plasma etching aided femtosecond laser processing

Centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates using a femtosecond laser with square-shaped Flat-Top focus spots

Femtosecond laser surface modification coupling with surface metallurgical reaction promotes surface plasticity of SiC

Femtosecond Laser-Induced Phase Transformation on Single-Crystal 6H-SiC

Experimental Investigation on Ablation of 4H-SiC by Infrared Femtosecond Laser

A Review of Femtosecond Laser Processing of Silicon Carbide

Internal modified structure of silicon carbide prepared by ultrafast laser for wafer slicing

Femtosecond laser micromachining of SiC ceramic structures

Influence Of Pulse Energy And Scanning Speed Of Femtosecond Laser On Surface Roughness Of Sic Ceramics

One-step fabrication of fine surfaces via femtosecond laser on sliced SiC