Abstract:Wide bandgap (WBG) materials have excellent semiconductor and physicochemical properties and are emerging materials. Silicon carbide (SiC) and gallium nitride (GaN), two representatives of third-generation semiconductor materials, can be used in high temperature, high voltage, high frequency, and high power applications. However, both materials are difficult to machine due to their brittle and hard properties. Laser processing is a suitable processing method, and in particular the unique non-thermal properties of ultra-short pulse laser processing have led to a wide range of applications in a variety of materials including ceramics, metals and biological tissues. WBG materials are third-generation semiconductor materials with broad application prospects in the semiconductor industry, but there are relatively few summarized studies on ultrashort laser processing of WBG materials. With this background, this paper reviews the application of ultra-short pulse lasers for the processing of two WBG materials, SiC and GaN. Laser-assisted processing, laser fabrication of microstructures and laser processing of difficult and complex parts are the three main components of ultrashort laser processing of SiC. Ultra-short laser processing of GaN, on the other hand, focuses mainly on laser lift-off and is used less for fabricating microstructures. Physical mechanisms of laser removal of semiconductor materials are summarized. Then, based on the classification of the pulse width, the applications of two types of ultrafast lasers, picosecond and femtosecond, for processing SiC and GaN materials are summarized. Finally, the paper concludes and discusses the existing ultrafast laser processing techniques for SiC and GaN materials and future perspectives.

A Review of Femtosecond Laser Processing of Silicon Carbide

Femtosecond laser modification of silicon carbide substrates and its influence on CMP process

Ablation Threshold and Material Removal Mechanisms of SiC Processed by Femtosecond Laser

A review of ultra-short pulse laser micromachining of wide bandgap semiconductor materials: SiC and GaN

Experimental Study on Femtosecond Laser Processing Performance of Single-Crystal Silicon Carbide

Femtosecond Laser Modification of Silicon Carbide to Improve the Materials Removal Efficiency

High-speed Processing of Silicon Carbide Ceramic by High Repetition Frequency Femtosecond Laser

High-Power Femtosecond Laser Processing of SiC Ceramics with Optimized Material Removal Rate

Study of Femtosecond Laser Ablation and Polishing Process on 4H-SiC Substrate

Influence of surface morphology on processing of C/SiC composites via femtosecond laser

Femtosecond laser micromachining of SiC ceramic structures

Nanosecond Laser Irradiation Assisted Chemical Mechanical Polishing (CMP) Process for Promoting Material Removal of Single Crystal 4H-Sic

Experimental and Simulation Research on Femtosecond Laser Induced Controllable Morphology of Monocrystalline SiC

A State-of-the-Art Review of Fracture Toughness of Silicon Carbide: Implications for High-Precision Laser Dicing Techniques

Micromachining of 4H-Sic Using Femtosecond Laser

Experimental Investigation on Ablation of 4H-SiC by Infrared Femtosecond Laser

A review of laser beam applications for processing silicon

Investigation of the Morphology and Structural Transformation of 6H-Sic Induced by a Single Femtosecond Laser Pulse

A Comparison among Dry Laser Ablation and Some Different Water-Laser Co-Machining Processes of Single Crystal Silicon Carbide

Investigation on femtosecond laser combined with dynamic wet etching machining of SiC/SiC

Modifying single-crystal silicon and trimming silicon microring devices by femtosecond laser irradiation