Abstract:Short-circuit faults are the most critical failure mechanism in power converters. Among the various short-circuit protection schemes, desaturation protection is the most mature and widely used solution. Due to the lack of gate driver integrated circuit (IC) with desaturation protection for the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET), the conventional insulated gate bipolar transistor (IGBT) driver IC is normally used as these two devices have similar gate structure and driving mechanism. In this work, a gate driver with desaturation protection is designed for the 1.2-kV/30-A SiC MOSFET and silicon (Si) IGBT with the off-the-shelf driver IC. To further limit voltage-overshoot at the rapid turn-off transient, the active clamping circuit is introduced. Based on the experiments of switching characterization and short-circuit test, the SiC MOSFET shows faster switching speed, more serious electromagnetic interference (EMI) issue, lower switching loss (half), and higher short-circuit current (1.6 times) than the Si IGBT, even with a slower gate driver. Thus, a rapid response speed is required for the desaturation protection circuit of SiC MOSFET. Due to the long delay time of the existing desaturation protection scheme, it is technically difficult to design a sub- μ s protection circuit. In this work, an external current source is proposed to charge the blanking capacitor. A short-circuit time of 0.91 μ s is achieved with a reliable protection. Additionally, the peak current is reduced by 22%.

Tunnel Magnetoresistance-Based Short-circuit Protection for SiC MOSFET in HybridPACK™ Drive Package

Short-Circuit and Over-Current Fault Detection for SiC MOSFET Modules Based on Tunnel Magnetoresistance with Predictive Capabilities

Application of Tunnel Magnetoresistance to Health Monitoring of Modular Multilevel Converter Submodules

Design and Performance Evaluation of a Short-circuit Protection Scheme for SiC MOSFETs

Tunnel Magnetoresistance-Based Short-Circuit and Over-Current Protection for IGBT Module

A Digital‐controlled Gate Charge Detection Circuit for Short‐circuit Protection and Condition Monitoring of SiC MOSFET

A Solution to Press-Pack Packaging of SiC MOSFETS

Design and evaluation of press-pack SiC MOSFET

Short-Circuit Fault Adaptive Analysis and Protection for SiC MOSFETs

Short-circuit and overcurrent protection scheme of SiC MOSFET based on combined protection method

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Short-Circuit Characterization and Protection of 10-kV SiC mosfet

A Single Gate Driver Based Solid-State Circuit Breaker Using Series Connected SiC MOSFETs

SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode

SiC Trench MOSFET with Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode

Characterization of Electro-Thermal Coupling Behaviors and Safe Operating Area of SiC MOSFET Modules in Pulsed Power Applications

The Integrated Fast Short-Circuit Protection Technique with Soft Turn-off for SiC MOSFET

Improved Short-Circuit Protection Method for SiC MOSFET Split-Output Power Module Achieving Ultra-Low Fault Dissipated Energy

Test Methodology for Short-Circuit Assessment and Safe Operation Identification for Power SiC MOSFETs

Comparative Design of Gate Drivers with Short-Circuit Protection Scheme for SiC MOSFET and Si IGBT

An In-Depth Investigation into Short-Circuit Failure Mechanisms of State-of-the-Art 1200 V Double Trench SiC MOSFETs