Abstract:SiC substrates have outstanding advantages over traditional materials in power device application, and are mainly prepared by a physical vapor transport method (PVT). Whether the PVT furnace works by resistance heating or induction heating, both face the problem of the deterioration of growth conditions during a long-term process. The relative position of the thermal field directly affects the crystal growth conditions, but the law of specific influence and the change in physical environment inside the thermal field have not been made sufficiently clear and lack systematic research. Therefore, SiC single crystal growth, with different directions and rates in the direction of movement of the heating module, was modeled using a simulation method, and the law of variation of the physical field, including heat flux, temperature, powder porosity and growth rate parameters under different schemes, was analyzed. The study indicates that the decay of raw materials is the primary reason why growth conditions cannot be maintained. The results verified that different coils' modes of movement have different effects on the improvement or adjustment of SiC crystals' growth conditions. Under the same temperature control conditions, the coils' movement rates of 200 μm/h, 0, -200 μm/h and -400 μm/h correspond to the average growth rates of 140, 152, 165 and 172 μm/h, respectively. The results show that downward displacement of the coils is beneficial in compensating for the deterioration of growth conditions, but it is easier to form convex surfaces and is not conducive to expanding diameter growth. This also verifies that the desired crystal growth state can be obtained by adjusting the position of the thermal field.

Influence of Interfacial Energy on the Growth of SiC Single Crystals from High Temperature Solutions

Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal

Effects of Solution Height and Crystal Rotation on the Solution Flow Behavior in the Top-Seeded Solution Growth of SiC Single Crystals

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

The Effect of Solution Treatment on the Si Particles’ Morphology Evolution and the Thermal Conductivity and Tensile Properties of Sb-Modified Al-8Si-0.6Mg Alloys

Interfacial Regulation and Fracture Mechanism of Al–Si/SiC Composites Infiltrated under Super-Gravity Field

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Growth Mechanism of Eutectic Si in Super-Gravity Solidified Al-Si Alloy During Annealing

Surface Control of AlN Single Crystal Growth on SiC Substrate

Crystal Chemistry at Interfaces Between Liquid Al and Polar SiC{0001} Substrates

Molecular Dynamics Simulations of the Effect of Carbon Concentration on Silicon Carbide Crystal Growth

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

The Growth of Sic Crystals from Cosi Molten Alloy Fluxes

Effect of diamond surface structure on the interfacial reaction and properties of diamond/SiC composites

Study of Effect of Coil Movement on Growth Conditions of SiC Crystal

A sessile drop approach for studying 4H-SiC/liquid silicon high-temperature interface reconstructions

SiC Crystal Growth from Transition Metal Silicide Fluxes

High-Speed Growth of 4H-SiC Single Crystal Using Si-Cr Based Melt

Evolution Mechanism of Solid–Liquid Interface of Large-Sized Bulk Polysilicon via Si–Sn Solution Growth

Properties of the structural defects during SiC–crystal–induced crystallization on the solid–liquid interface

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process