Abstract:Vanadium atoms are controllably introduced into monolayer WS2 to achieve continuous electrical polarity modulation. Field‐effect transistors based on the 4.7 at% V‐doped WS2 show outstanding p‐type performance. Expanding on this triumph, the inaugural prototype of a monolayer homogeneous complementary metal‐oxide‐semiconductor (CMOS) inverter device is constructed through atomic substitutional doping in transition metal dichalcogenides (TMDs). As demand for higher integration density and smaller devices grows, silicon‐based complementary metal‐oxide‐semiconductor (CMOS) devices will soon reach their ultimate limits. 2D transition metal dichalcogenides (TMDs) semiconductors, known for excellent electrical performance and stable atomic structure, are seen as promising materials for future integrated circuits. However, controlled and reliable doping of 2D TMDs, a key step for creating homogeneous CMOS logic components, remains a challenge. In this study, a continuous electrical polarity modulation of monolayer WS2 from intrinsic n‐type to ambipolar, then to p‐type, and ultimately to a quasi‐metallic state is achieved simply by introducing controllable amounts of vanadium (V) atoms into the WS2 lattice as p‐type dopants during chemical vapor deposition (CVD). The achievement of purely p‐type field‐effect transistors (FETs) is particularly noteworthy based on the 4.7 at% V‐doped monolayer WS2, demonstrating a remarkable on/off current ratio of 105. Expanding on this triumph, the first initial prototype of ultrathin homogeneous CMOS inverters based on monolayer WS2 is being constructed. These outcomes validate the feasibility of constructing homogeneous CMOS devices through the atomic doping process of 2D materials, marking a significant milestone for the future development of integrated circuits.

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Bilayer tungsten diselenide transistors with on-state currents exceeding 1.5 milliamperes per micrometre

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Performance Limit of Monolayer WSe₂ Transistors; Significantly Outperform Their MoS₂ Counterpart

Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling

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Low Resistance Ohmic Contact to P-type Monolayer WSe2

Hole mobility enhancement in monolayer WSe2 p-type transistors through molecular doping

High-performance N-Type Transistors Based on CVD-grown Large-Domain Trilayer WSe2

Sub-10 Nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes As an Evaporating Mask

Electrical Polarity Modulation in V‐Doped Monolayer WS2 for Homogeneous CMOS Inverters

High-performance n-type transistors based on CVD-grown large-domain trilayer WSe 2

Low Contact Resistance WSe 2 p -Type Transistors with Highly Stable, CMOS-Compatible Dopants

Ultimate Limit in Optoelectronic Performances of Monolayer WSe 2 Sloping-Channel Transistors

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Low Resistance Contact to P-Type Monolayer WSe2