Monolayer transistors at wafer scales

Du Xiang,Tao Liu

DOI: https://doi.org/10.1038/s41928-021-00694-7

IF: 33.255

2021-12-01

Nature Electronics

Abstract:Monolayer transition metal dichalcogenide transistors can be fabricated on 300 mm wafers using an approach that is compatible with back-end-of-line process temperatures.

engineering, electrical & electronic

What problem does this paper attempt to address?

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.

Yibo Zhu,Yijun Li,Ghidewon Arefe,Robert A Burke,Cheng Tan,Yufeng Hao,Xiaochi Liu,Xue Liu,Won Jong Yoo,Madan Dubey,Qiao Lin,James C Hone

DOI: https://doi.org/10.1021/acs.nanolett.8b01091

IF: 10.8

2018-01-01

Nano Letters

Abstract:Two-dimensional transition-metal dichalcogenides (TMDs) are unique candidates for the development of next-generation electronic devices. However, the large contact resistance between metal and the monolayer TMDs have significantly limited the devices' performance. Also, the integration of ultrathin high-k dielectric layers with TMDs remains difficult due to the lack of dangling bonds on the surface of TMDs. We present monolayer molybdenum disulfide field-effect transistors with bottom local gates consisting of monolayer graphene. The atomic-level thickness and surface roughness of graphene facilitate the growth of high-quality ultrathin HfO2 and suppress gate leakage. Strong displacement fields above 8 V/nm can be applied using a single graphene gate to electrostatically dope the MoS2, which reduces the contact resistances between Ni and monolayer MoS2 to 2.3 k Omega.mu m at low gate voltages. The devices exhibit excellent switching characteristics including a near-ideal subthreshold slope of 64 millivolts per decade, low threshold voltage (similar to 0.5 V), high channel conductance (>100 mu S/mu m), and low hysteresis. Scaled devices with 50 and 14 nm channels as well as ultrathin (5 nm) gate dielectrics show effective immunity to short-channel effects. The device fabricated on flexible polymeric substrate also exhibits high performance and has a fully transparent channel region that is desirable in optical-related studies and practical applications.
Sub-10 Nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes As an Evaporating Mask

Xiaoyang Xiao,Mo Chen,Jin Zhang,Tianfu Zhang,Lihui Zhang,Yuanhao Jin,Jiaping Wang,Kaili Jiang,Shoushan Fan,Qunqing Li

DOI: https://doi.org/10.1021/acsami.8b21437

IF: 9.5

2019-01-01

ACS Applied Materials & Interfaces

Abstract:Transition-metal dichalcogenides are promising challengers to conventional semiconductors owing to their remarkable electrical performance and suppression of short-channel effects (SCEs). In particular, monolayer molybdenum disulfide has exhibited superior suppression of SCEs owing to its atomic thickness, high effective carrier mass, and low dielectric constant. However, difficulties still remain in large-scale stable fabrication of nanometer-scale channels. Herein, a method to fabricate electrodes with sub-10 nm gaps was demonstrated using horizontally aligned single-walled carbon nanotubes as an evaporation mask. The widths of the nanogaps exhibit robust stability to various process parameters according to the statistical results. Based on these nanogaps, ultrashort-channel length monolayer MoS2 field-effect transistors were produced. Monolayer MoS2 devices with a 7.5 nm channel length and a 10 nm thick HfO2 dielectric layer exhibited excellent performances with an ON/OFF ratio up to 107, a mobility of 17.4 cm2/V·s, a subthreshold swing of about 120 mV/dec, and a drain-induced barrier lowering of about 140 mV/V, all of which suggest a superior suppression of SCEs. This work provides a universal and stable method for large-scale fabrication of ultrashort-channel 2D-material transistors.
CVD Monolayer Tungsten-Based PMOS Transistor with High Performance at Vds = -1 V

Xin Wang,Yanqing Wu

DOI: https://doi.org/10.1109/icta56932.2022.9963068

2022-01-01

Abstract:Two-dimensional (2D) semiconducting materials channels enable ultimate scaling of transistors and will help Moore's Law Scaling for decades. In this paper, we reported p-type WS e2 transistors using monolayer (¬0.85 nm) channels by molten-salt-assisted chemical vapor deposition. The transfer-free back-gate devices fabricated based on 100 nm SiO2/Si substrate exhibit highest on current at V ds = -1 V among transistors of monolayer p-WS e2 , and a high on/off ratio up to 10 8 .
Monolayer Molybdenum Disulfide Transistors with Scaling Dielectric Equivalent Oxide Thickness

Chengwei Hu,Xiong Xiong,Yanqing Wu

DOI: https://doi.org/10.1088/1742-6596/2829/1/012002

2024-09-20

Journal of Physics Conference Series

Abstract:Monolayer molybdenum disulfide (MoS 2 ) demonstrates potential in transistor ultimate scaling, providing a new paradigm for developing next-generation electronic and optoelectronic devices. To enhance device performance, it is necessary to reduce the equivalent oxide thickness (EOT) of the device gate dielectric. In this work, we have successfully reduced the equivalent oxide thickness of the device to 2.3 nm (corresponding to hafnium oxide with a physical thickness of 7 nm), achieving improved device performance, including lowered threshold voltage, enhanced transconductance, and reduced subthreshold swing to 82 mV/dec, demonstrating the superiority of reduced EOT in enhancing device performance.
Optimized Electrical Properties of P-Type Field-Effect Transistors Based on WSe2 Grown at Moderate Temperatures

Xin Wang,Xiong,Xinhang Shi,Chengru Gu,Yanqing Wu

DOI: https://doi.org/10.1063/5.0184707

IF: 4

2023-01-01

Applied Physics Letters

Abstract:Two-dimensional transition-metal dichalcogenides (TMDCs) have been pursued for high-performance logic electronic devices, and compatibility with silicon complementary metal-oxide-semiconductor (CMOS) technology is essential. Thus, high-quality material synthesis at reduced temperature is a key challenge for TMDC integration with the back-end-of-line silicon CMOS. In this work, TMDCs have been synthesized at temperatures down to 450 degrees C on SiO2/Si substrates via chemical vapor deposition. This work highlights the necessity of improving metal precursor mass flux during the low-temperature synthesis of TMDC films. Improved electrical characteristics of the back-gated p-type field-effect transistors based on monolayer WSe2 exhibit an on-current of 14 mu A/mu m and subthreshold swing of 200 mV/dec.
Ultimate dielectric scaling of 2D transistors via van der Waals metal integration

Weiqi Dang,Bei Zhao,Chang Liu,Xiangdong Yang,Lingan Kong,Zheyi Lu,Bo Li,Jia Li,Hongmei Zhang,Wanying Li,Shun Shi,Ziyue Qin,Lei Liao,Xidong Duan,Yuan Liu

DOI: https://doi.org/10.1007/s12274-021-3708-1

IF: 9.9

2021-08-05

Nano Research

Abstract:The two-dimensional transition metal dichalcogenides (TMDs) have attracted intense interest as an atomically thin semiconductor channel for the continued transistor scaling. However, with a dangling bond free surface, it has been a key challenge to reliably integrate high-quality gate dielectrics on TMDs. In particular, the atomic layer deposition of dielectrics on TMDs typically features highly non-uniform nucleation and produces a highly rough or porous dielectric film with rich pinholes that are prone to further damage during the gate integration process. Herein we report a van der Waals (vdW) integration route towards highly reliable gate metal integration on porous dielectrics. The physical lamination process employed by the vdW integration avoids the direct deposition of metal electrodes into porous dielectrics to ensure reliable gate integration and produce low gate leakage devices. The electrical measurements demonstrate the vdW integrated MoS2 top gate devices exhibit substantially reduced gate leakage current that is about 3–5 orders of magnitude smaller than that with deposited metal electrodes. Furthermore, we show the vdW integration process can be used to create high performance top-gated MoS2 transistors with ultrathin Al2O3 dielectrics down to 1 nm, representing the ultimate dielectric scaling for TMDs transistors. This study demonstrates that vdW integration can enable highly reliable gate integration on relatively low quality dielectrics on TMDs, and opens an interesting pathway to high-performance top-gate transistors using dangling bond free two-dimensional (2D) semiconductors.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Ultrashort Channel Chemical Vapor Deposited Bilayer WS2 Field-Effect Transistors

Xinhang Shi,Xuefei Li,Qi Guo,Min Zeng,Xin Wang,Yanqing Wu

DOI: https://doi.org/10.1063/5.0119375

IF: 15

2023-01-01

Applied Physics Reviews

Abstract:Two-dimensional transition metal dichalcogenides (TMDs) are potential candidates for next generation channel materials owing to their atomically thin structure and high carrier mobility, which allow for the ultimate scaling of nanoelectronics. However, TMDs-based field-effect transistors are still far from delivering the expected performance, which is mainly attributed to their high contact resistance and low saturation velocity (vsat). In this work, we report high-performance short-channel WS2 transistors based on bandgap engineering. The bilayer WS2 channel not only shows a higher average field-effect mobility (μFE) than the monolayer channel but also exhibits excellent metal-Ohmic contact using a regular physical vapor deposition deposited Ni/Au contact, reducing the Rc value to a record low value of 0.38 kΩ · μm without any intentional doping. The bilayer WS2 device of the 80 nm channel exhibits a high on-state current of 346 μA/μm at Vds = 1 V, near-zero drain-induced barrier lowering, and a record high Ion/Ioff ratio over 109. Furthermore, a record high on-state current of 635 μA/μm at Vds = 1 V and a record high vsat of 3.8 × 106 cm/s have been achieved for a shorter 18 nm channel device, much higher than previous WS2 transistors. This work reveals the intrinsically robust nature of bilayer WS2 crystals with promising potential for integration with conventional fabrication processes.
Bilayer tungsten diselenide transistors with on-state currents exceeding 1.5 milliamperes per micrometre

Ruixia Wu,Quanyang Tao,Jia Li,Wei Li,Yang Chen,Zheyi Lu,Zhiwen Shu,Bei Zhao,Huifang Ma,Zhengwei Zhang,Xiangdong Yang,Bo Li,Huigao Duan,Lei Liao,Yuan Liu,Xidong Duan,Xiangfeng Duan

DOI: https://doi.org/10.1038/s41928-022-00800-3

IF: 33.255

2022-01-01

Nature Electronics

Abstract:Two-dimensional semiconductors such as layered transition metal dichalcogenides can offer superior immunity to short-channel effects compared with bulk semiconductors such as silicon. As a result, these materials can be used to create highly scaled transistors. However, on-state current densities of two-dimensional semiconductor transistors are still below those of silicon transistors. Here we show that bilayer tungsten diselenide transistors that have channel lengths of less than 100 nm can exhibit on-state current densities above 1.0 mA mu m(-1) and on-state resistances below 1.0 k omega mu m at room temperature. The devices have atomically clean van der Waals vanadium diselenide contacts and are created using van der Waals epitaxy and controlled crack formation processes. With a 20-nm-long and 1.3-nm-thick transistor, an on-state current density of 1.72 mA mu m(-1) and on-state resistance of 0.50 k omega mu m are achieved, showing comparable performance to silicon transistors with similar channel lengths and driving voltages. Vanadium diselenide van der Waals contacts made with a controlled crack formation process can be used to fabricate tungsten diselenide transistors with channel lengths of less than 100 nm, on-state current densities of up to 1.7 mA mu m(-1) and on-state resistances down to 0.50 k omega mu m.
Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides

Xiang-Wei Jiang,Shu-Shen Li

DOI: https://doi.org/10.1063/1.4878515

IF: 4

2014-05-12

Applied Physics Letters

Abstract:Performance limits of tunnel field-effect transistors based on mono-layer transition metal dichalcogenides are investigated through numerical quantum mechanical simulations. The atomic mono-layer nature of the devices results in a much smaller natural length λ, leading to much larger electric field inside the tunneling diodes. As a result, the inter-band tunneling currents are found to be very high as long as ultra-thin high-k gate dielectric is possible. The highest on-state driving current is found to be close to 600 μA/μm at Vg = Vd = 0.5 V when 2 nm thin HfO2 layer is used for gate dielectric, outperforming most of the conventional semiconductor tunnel transistors. In the five simulated transition-metal dichalcogenides, mono-layer WSe2 based tunnel field-effect transistor shows the best potential. Deep analysis reveals that there is plenty room to further enhance the device performance by either geometry, alloy, or strain engineering on these mono-layer materials.

physics, applied
High Performance Few-Layer MoS2 Transistor Arrays with Wafer Level Homogeneity Integrated by Atomic Layer Deposition

Tianbao Zhang,Yang Wang,Jing Xu,Lin Chen,Hao Zhu,Qingqing Sun,Shijin Ding,David Wei Zhang

DOI: https://doi.org/10.1088/2053-1583/aa9ea5

IF: 6.861

2018-01-01

2D Materials

Abstract:Wafer-level integration of 2D transition metal disulfide is the key factor for future large-scale integration of the continuously scaling-down devices, and has attracted great attention in recent years. Compared with other ultra-thin film growth methods, atomic layer deposition (ALD) has the advantages of excellent step coverage, uniformity and thickness controllability. In this work, we synthesized large-scale and thickness-controllable MoS2 films on sapphire substrate by ALD at 150 degrees C with molybdenum hexcarbonyl and hexamethyldisilathiane (HMDST) as precursors followed by high-temperature annealing in sulfur atmosphere. HMDST is introduced for the first time to enable a toxic-free process without hazardous sulfur precursors such as H2S and CH3SSCH3. The synthesized MoS2 retains the inherent benefits from the ALD process, including thickness controllability, reproducibility, wafer-level thickness uniformity, and high conformity. Finally, fieldeffect transistor (FET) arrays were fabricated based on the large-area ALD MoS2 films. The top-gate FETs exhibited excellent electrical performance such as high on/off current ratio over 103 and peak room-temperature mobility up to 11.56 cm(2) V-1 s(-1). This work opens up an attractive approach to realize the application of high-quality 2D materials with wafer scale homogeneity.
12-inch growth of uniform MoS2 monolayer for integrated circuit manufacture

Yin Xia,Xinyu Chen,Jinchen Wei,Shuiyuan Wang,Shiyou Chen,Simin Wu,Minbiao Ji,Zhengzong Sun,Zihan Xu,Wenzhong Bao,Peng Zhou

DOI: https://doi.org/10.1038/s41563-023-01671-5

Abstract:Two-dimensional (2D) semiconductors, such as transition metal dichalcogenides, provide an opportunity for beyond-silicon exploration. However, the lab to fab transition of 2D semiconductors is still in its preliminary stages, and it has been challenging to meet manufacturing standards of stability and repeatability. Thus, there is a natural eagerness to grow wafer-level, high-quality films with industrially acceptable scale-cost-performance metrics. Here we report an improved chemical vapour deposition synthesis method in which the controlled release of precursors and substrates predeposited with amorphous Al2O3 ensure the uniform synthesis of monolayer MoS2 as large as 12 inches while also enabling fast and non-toxic growth to reduce manufacturing costs. Transistor arrays were fabricated to further confirm the high quality of the film and its integrated circuit application potential. This work achieves the co-optimization of scale-cost-performance metrics and lays the foundation for advancing the integration of 2D semiconductors in industry-standard pilot lines.
Monolayer black phosphorus and germanium arsenide transistors via van der Waals channel thinning

Wanying Li,Quanyang Tao,Zhiwei Li,Guanhua Yang,Zheyi Lu,Yang Chen,Yao Wen,Yiliu Wang,Lei Liao,Yuan Liu,Jun He

DOI: https://doi.org/10.1038/s41928-023-01087-8

IF: 17.694

2023-12-05

NanoScience and Technology

Abstract:Two-dimensional (2D) semiconductors can potentially be used to create scaled electronic devices. However, for a number of promising 2D materials—such as black phosphorus and germanium arsenide—the fabrication of monolayer transistors is challenging and is limited by the difficulties in forming robust electrical contacts with the delicate 2D materials. Here, we report the fabrication of monolayer black phosphorus and germanium arsenide transistors with three-dimensional raised contacts using a van der Waals peeling technique. Through layer-by-layer mechanical peeling, the channel region of a multilayer black phosphorus transistor can be gradually reduced to monolayer thickness without degrading its delicate lattice and while retaining a multilayer contact region. Using the technique, we measure the electrical properties of the same 2D transistor with different channel thicknesses. We find that the carrier mobility of black phosphorus drops sharply when reducing body thickness, behaving more like a conventional bulk semiconductor rather than a pure van der Waals semiconductor.
Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices

Xuefei Li,Xinhang Shi,Damiano Marian,David Soriano,Teresa Cusati,Giuseppe Iannaccone,Gianluca Fiori,Qi Guo,Wenjie Zhao,Yanqing Wu

DOI: https://doi.org/10.1126/sciadv.ade5706

IF: 13.6

2023-02-16

Science Advances

Abstract:Van der Waals coupling with different stacking configurations is emerging as a powerful method to tune the optical and electronic properties of atomically thin two-dimensional materials. Here, we investigate 3R-stacked transition-metal dichalcogenides as a possible option for high-performance atomically thin field-effect transistors (FETs). We report that the effective mobility of 3R bilayer WS 2 (WSe 2 ) is 65% (50%) higher than that of 2H WS 2 (WSe 2 ). The 3R bilayer WS 2 n-type FET exhibits a high on-state current of 480 μA/μm at V ds = 1 V and an ultralow on-state resistance of 1 kilohm·μm. Our observations, together with multiscale simulations, reveal that these improvements originate from the strong interlayer coupling in the 3R stacking, which is reflected in a higher conductance compared to the 2H stacking. Our method provides a general and scalable route toward advanced channel materials in future electronic devices for ultimate scaling, especially for complementary metal oxide semiconductor applications.

multidisciplinary sciences
Scaled contact length with low contact resistance in monolayer 2D channel transistors.

Wen-Chia Wu,Terry Y. T. Hung,D. Mahaveer Sathaiya,Dongxu Fan,Goutham Arutchelvan,Chen-Feng Hsu,Sheng-Kai Su,Ang-Sheng Chou,Edward Chen,Weisheng Li,Zhihao Yu,Hao Qiu,Ying-Mei Yang,Kuang-I Lin,Yun-Yang Shen,Wen-Hao Chang,San Lin Liew,Vincent D.-H. Hou,Jin Cai,Chung-Cheng Wu,Jeff Wu,H.-S. Philip Wong,Xinran Wang,Chao-Hsin Chien,Chao-Ching Cheng,Iuliana P. Radu

DOI: https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185408

2023-01-01

Abstract:Two-dimensional transition metal dichalcogenides (2D TMDs) are expected to enable extremely scaled logic transistors for their ultrathin body and superior electrostatic control, i.e. gate length scaling. Aggressive scaling requires also contact length scaling. Here we demonstrate contact length scaling with low contact resistance of sub-100 Ω-μm (best data in TLM) through optimized surface preparation and semimetal/metal stack. Monolayer-MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> channel transistors have the same driving current at contact length down to 30 nm. A calibrated TCAD model which captured device trends is used to extrapolate to ~250 Ω-μm at sub-15nm contact length per nanosheet of MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> .
Monolayer MoS2-based Transistors with Low Contact Resistance by Inserting Ultrathin Al2O3 Interfacial Layer

Gang Chen,Xin Lin,Yuan Liu,Fang Wang,Kai Hu,Xin Shan,ZeYu Wu,YuPeng Zhang,WeiCan Nie,JiXiang Zhong,TianLing Ren,KaiLiang Zhang

DOI: https://doi.org/10.1007/s11431-022-2330-3

2023-01-01

Science China Technological Sciences

Abstract:Transition metal dichalcogenides (TMDCs) are promising high performance electronic materials due to their interesting semiconductor properties. However, it is acknowledged that the effective electrical contact between TMDCs-layered materials and metals remains one of the major challenges. In this work, the homogeneous monolayer MoS2 films with high crystalline quality were prepared by chemical vapor deposition method on SiO2/Si substrates. The back-gate field-effect transistors (FETs) were fabricated by inserting an ultrathin Al2O3 interlayer between the metal electrodes and MoS2 nanosheets. With the addition of an ultrathin 0.8 nm Al2O3 interlayer, the contact resistance decreased dramatically from 59.9 to 1.3 kΩ μm and the Schottky barrier height (SBH) dropped from 102 to 27 meV compared with devices without the Al2O3 interlayer. At the same time, the switching ratio increased from ∼106 to ∼108, and both the on-current and field-effect mobility were greatly improved. We find that the ultrathin Al2O3 interlayer can not only reduce the SBH to alleviate the Fermi level pinning phenomenon at the interface, but also protect the channel materials from the influence of air and moisture as a covering layer. In addition, the lattice and band structures of Al2O3/MoS2 film were calculated and analyzed by first-principles calculation. It is found that the total density of states of the Al2O3/MoS2 film exhibits interfacial polarized metals property, which proves the higher carrier transport characteristics. FETs with Al2O3 interlayers have excellent stability and repeatability, which can provide effective references for future low power and high performance electronic devices.
Two dimensional semiconducting materials for ultimately scaled transistors

Tianyao Wei,Zichao Han,Xinyi Zhong,Qingyu Xiao,Tao Liu,Du Xiang

DOI: https://doi.org/10.1016/j.isci.2022.105160

IF: 5.8

2022-10-21

iScience

Abstract:Two dimensional (2D) semiconductors have been established as promising candidates to break through the short channel effect that existed in Si metal-oxide-semiconductor field-effect-transistor (MOSFET), owing to their unique atomically layered structure and dangling-bond-free surface. The last decade has witnessed the significant progress in the size scaling of 2D transistors by various approaches, in which the physical gate length of the transistors has shrank from micrometer to sub-one nanometer with superior performance, illustrating their potential as a replacement technology for Si MOSFETs. Here, we review state-of-the-art techniques to achieve ultra-scaled 2D transistors with novel configurations through the scaling of channel, gate, and contact length. We provide comprehensive views of the merits and drawbacks of the ultra-scaled 2D transistors by summarizing the relevant fabrication processes with the corresponding critical parameters achieved. Finally, we identify the key opportunities and challenges for integrating ultra-scaled 2D transistors in the next-generation heterogeneous circuitry.

multidisciplinary sciences
Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

Simeng Zhang,Hu Xu,Fuyou Liao,Yangye Sun,Kun Ba,Zhengzong Sun,Zhi-Jun Qiu,Zihan Xu,Hao Zhu,Lin Chen,Qingqing Sun,Peng Zhou,Wenzhong Bao,David Wei Zhang

DOI: https://doi.org/10.1088/1361-6528/aafe24

IF: 3.5

2019-01-01

Nanotechnology

Abstract:Chemical vapor deposition synthesis of semiconducting transition metal dichalcogenides (TMDs) offers a new route to build next-generation semiconductor devices. But realization of continuous and uniform multilayer (ML) TMD films is still limited by their specific growth kinetics, such as the competition between surface and interfacial energy. In this work, a layer-bylayer vacuum stacking transfer method is applied to obtain uniform and non-destructive ML-MoS2 films Back-gated field effect transistor (FET) arrays of 1L- and 2L-MoS2 are fabricated on the same wafer, and their electrical performances are compared. We observe a significant increase of field-effect mobility for 2L-MoS 2 FETs, up to 32.5 cm(2)V(-1)s(-1), which is seven times higher than that of 1L-MoS2(4.5 cm(2)V(-1)s(-1)). Then we also fabricated 1L-, 2L-, 3L-, and 4L-MoS2 FETs to further investigate the thickness-dependent characteristics of transferred ML-MoS2. Measurement results show a higher mobility but a smaller current on/off ratio as the layer number increases, suggesting that a balance between mobility and current on/off ratio can be achieved in 2L- and 3L-MoS2 FETs. Dual-gated structure is also investigated to demonstrate an improved electrostatic control of the ML-MoS2 channel.
Intrinsic subthermionic capabilities and high performance of easy-to-fabricate monolayer metal dihalide MOSFETs

Demetrio Logoteta,Jiang Cao,Marco Pala,Paolo Marconcini,Giuseppe Iannaccone

DOI: https://doi.org/10.48550/arXiv.2106.12077

2021-06-22

Mesoscale and Nanoscale Physics

Abstract:We investigate the design of steep-slope metal-oxide-semiconductor field-effect transistors (MOSFETs) exploiting monolayers of transition metal dihalides as channel materials. With respect to other previously proposed steep-slope transistors, these devices require simplified manufacturing processes, as no confinement of the 2D material is needed, nor any tunneling heterojunction or ferroelectric gate insulators, and only n- or p-type contacts are demanded. We demonstrate their operation by studying an implementation based on monolayer CrI$_2$ through quantum transport simulations. We show that the subthermionic capabilities of the device originate from a cold-source effect, intrinsically driven by the shape of the band structure of the 2D material and robust against the effects of thermalization induced by the electron-phonon interactions. Due to the absence of a tunneling barrier when the device is switched on, current levels can be achieved that are typically out of reach for tunnel FETs. The device also exhibits excellent scaling properties, maintaining a subthermionic subthreshold swing (SS) up to channel lengths as short as 5 nm.
Top-Down Integration of Molybdenum Disulfide Transistors with Wafer-Scale Uniformity and Layer Controllability.

Mao-Lin Shi,Lin Chen,Tian-Bao Zhang,Jing Xu,Hao Zhu,Qing-Qing Sun,David Wei Zhang

DOI: https://doi.org/10.1002/smll.201603157

IF: 13.3

2017-01-01

Small

Abstract:The lack of stable and efficient techniques to synthesize high-quality large-area thin films is one of the major bottlenecks for the real-world application of the 2D transition metal dichalcogenides. In this work, the growth of molybdenum disulfide (MoS2) on sapphire substrates by sulfurizing the MoO3 film deposited by atomic layer deposition (ALD) is reported. The advantages of the ALD method can be well inherited, and the synthesized MoS2 films exhibit excellent layer controllability, wafer-scale uniformity, and homogeneity. MoS2 films with desired thickness can be obtained by varying MoO3 ALD cycles. The atomic force microscope and Raman measurements demonstrate that the ALD-based MoS2 has good uniformity. Clear Raman shift as a function of the film thickness is observed. Field-effect transistor devices are fabricated through a transfer-free and top-down process. High On/Off current ratio (approximate to 104) and medium-level electron mobilities (approximate to 0.76 cm(2) V-1 s(-1) for monolayer, and 5.9 cm(2) V-1 s(-1) for four-layer) are obtained. The work opens up an attractive approach to realize the application of wafer-scale 2D materials in integrated circuits and systems.
Synthesis of Wafer-Scale Monolayer WS2 Crystals toward the Application in Integrated Electronic Devices

Jiajun Chen,Kai Shao,Weihuang Yang,Weiqing Tang,Jiangpeng Zhou,Qinming He,Yaping Wu,Chunmiao Zhang,Xu Li,Xu Yang,Zhiming Wu,Junyong Kang

DOI: https://doi.org/10.1021/acsami.9b04791

2019-05-29

Abstract:Two-dimensional transition-metal dichalcogenides (TMDCs) possess unique electronic and optical properties, which open up a new opportunity for atomically thin optoelectronic devices. Synthesizing large-scale monolayer TMDCs on the SiO2/Si substrate is crucial for practical applications, however, it remains a big challenge. In this work, a method which combines chemical vapor deposition (CVD) and thermal evaporation was employed to grow monolayer tungsten disulfide (WS2) crystals. Through controlling the density and the distribution of W precursors, a wafer-scale continuous uniform WS2 film was achieved, with the structural and spectral characterizations confirming a monolayer configuration and a high crystalline quality. Wafer-scale field-effect transistor arrays based on the monolayer WS2 were fabricated. The devices show superior electrical performances, and the maximal mobility is almost 1 order of magnitude higher than those of CVD-grown large-scale TMDC devices reported so far.

Monolayer transistors at wafer scales

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.

Sub-10 Nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes As an Evaporating Mask

CVD Monolayer Tungsten-Based PMOS Transistor with High Performance at Vds = -1 V

Monolayer Molybdenum Disulfide Transistors with Scaling Dielectric Equivalent Oxide Thickness

Optimized Electrical Properties of P-Type Field-Effect Transistors Based on WSe2 Grown at Moderate Temperatures

Ultimate dielectric scaling of 2D transistors via van der Waals metal integration

Ultrashort Channel Chemical Vapor Deposited Bilayer WS2 Field-Effect Transistors

Bilayer tungsten diselenide transistors with on-state currents exceeding 1.5 milliamperes per micrometre

Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides

High Performance Few-Layer MoS2 Transistor Arrays with Wafer Level Homogeneity Integrated by Atomic Layer Deposition

12-inch growth of uniform MoS2 monolayer for integrated circuit manufacture

Monolayer black phosphorus and germanium arsenide transistors via van der Waals channel thinning

Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices

Scaled contact length with low contact resistance in monolayer 2D channel transistors.

Monolayer MoS2-based Transistors with Low Contact Resistance by Inserting Ultrathin Al2O3 Interfacial Layer

Two dimensional semiconducting materials for ultimately scaled transistors

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

Intrinsic subthermionic capabilities and high performance of easy-to-fabricate monolayer metal dihalide MOSFETs

Top-Down Integration of Molybdenum Disulfide Transistors with Wafer-Scale Uniformity and Layer Controllability.

Synthesis of Wafer-Scale Monolayer WS2 Crystals toward the Application in Integrated Electronic Devices