Abstract:The discovery of graphene has ignited intensive interest in two-dimensional layered materials (2DLMs). These 2DLMs represent a new class of nearly ideal 2D material systems for exploring fundamental chemistry and physics at the limit of single-atom thickness, and have the potential to open up totally new technological opportunities beyond the reach of existing materials. In general, there are a wide range of 2DLMs in which the atomic layers are weakly bonded together by van der Waals interactions and can be isolated into single or few-layer nanosheets. The van der Waals interactions between neighboring atomic layers could allow much more flexible integration of distinct materials to nearly arbitrarily combine and control different properties at the atomic scale. The transition metal dichalcogenides (TMDs) (e.g., MoS2, WSe2) represent a large family of layered materials, many of which exhibit tunable band gaps that can undergo a transition from an indirect band gap in bulk crystals to a direct band gap in monolayer nanosheets. These 2D-TMDs have thus emerged as an exciting class of atomically thin semiconductors for a new generation of electronic and optoelectronic devices. Recent studies have shown exciting potential of these atomically thin semiconductors, including the demonstration of atomically thin transistors, a new design of vertical transistors, as well as new types of optoelectronic devices such as tunable photovoltaic devices and light emitting devices. In parallel, there have also been considerable efforts in developing diverse synthetic approaches for the rational growth of various forms of 2D materials with precisely controlled chemical composition, physical dimension, and heterostructure interface. Here we review the recent efforts, progress, opportunities and challenges in exploring the layered TMDs as a new class of atomically thin semiconductors.

Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices

Robust Stacking-Independent Ultrafast Charge Transfer in MoS2/WS2 Bilayers

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides

Ultrashort Channel Chemical Vapor Deposited Bilayer WS2 Field-Effect Transistors

Novel High-Mobility Field-Effect Transistors Based on Transition Metal Dichalcogenides

Stacking monolayers at will: A scalable device optimization strategy for two-dimensional semiconductors

Few-Layered MnAl2S4 Dielectrics for High-Performance van der Waals Stacked Transistors

Tapping the Performance of a Tungsten Disulfide Field-Effect Transistor with Deep Structure Optimization and Theoretical Simulation

High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

High Mobility Transistors and Flexible Optical Synapses Enabled by Wafer-Scale Chemical Transformation of Pt-Based 2D Layers

Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.

Large-scale and stacked transfer of bilayers MoS2 devices on a flexible polyimide substrate

High-Performance Flexible Nanoscale Field-Effect Transistors Based on Transition Metal Dichalcogenides

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

In-plane Schottky-barrier Field-Effect Transistors Based on 1 T /2 H Heterojunctions of Transition-Metal Dichalcogenides

Van der Waals stacking of multilayer In2Se3 with 2D metals induces transition from Schottky to Ohmic contact

Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts

Vertical WS2/SnS2 Van Der Waals Heterostructure for Tunneling Transistors.

Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges