Bilayer tungsten diselenide transistors with on-state currents exceeding 1.5 milliamperes per micrometre

Ruixia Wu,Quanyang Tao,Jia Li,Wei Li,Yang Chen,Zheyi Lu,Zhiwen Shu,Bei Zhao,Huifang Ma,Zhengwei Zhang,Xiangdong Yang,Bo Li,Huigao Duan,Lei Liao,Yuan Liu,Xidong Duan,Xiangfeng Duan

DOI: https://doi.org/10.1038/s41928-022-00800-3

IF: 33.255

2022-01-01

Nature Electronics

Abstract:Two-dimensional semiconductors such as layered transition metal dichalcogenides can offer superior immunity to short-channel effects compared with bulk semiconductors such as silicon. As a result, these materials can be used to create highly scaled transistors. However, on-state current densities of two-dimensional semiconductor transistors are still below those of silicon transistors. Here we show that bilayer tungsten diselenide transistors that have channel lengths of less than 100 nm can exhibit on-state current densities above 1.0 mA mu m(-1) and on-state resistances below 1.0 k omega mu m at room temperature. The devices have atomically clean van der Waals vanadium diselenide contacts and are created using van der Waals epitaxy and controlled crack formation processes. With a 20-nm-long and 1.3-nm-thick transistor, an on-state current density of 1.72 mA mu m(-1) and on-state resistance of 0.50 k omega mu m are achieved, showing comparable performance to silicon transistors with similar channel lengths and driving voltages. Vanadium diselenide van der Waals contacts made with a controlled crack formation process can be used to fabricate tungsten diselenide transistors with channel lengths of less than 100 nm, on-state current densities of up to 1.7 mA mu m(-1) and on-state resistances down to 0.50 k omega mu m.